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BSO201SP Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSO201SP Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 8 page ![]() 2001-12-21 Page 6 Preliminary data BSO201SP 9 Drain-source on-resistance RDS(on) = f(Tj) parameter: ID = -14.9 A, VGS = -4.5 V -60 -20 20 60 100 °C 160 Tj 5 6 7 8 9 10 m Ω 12 typ. 98% 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS, ID = -250 µA -60 -20 20 60 100 °C 160 Tj 0 0.2 0.4 0.6 0.8 1 1.2 V 1.6 2% typ. 98% 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD -1 -10 0 -10 1 -10 2 -10 A BSO201SP T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz 0 5 10 V 20 - VDS 3 10 4 10 pF Crss Coss Ciss |
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