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BSO350N03 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSO350N03 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 9 page BSO350N03 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=6 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % 0 10 20 30 40 50 60 -60 -20 20 60 100 140 180 T j [°C] 6 µA 60 µA 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 T j [°C] Ciss Coss Crss 10 3 10 2 10 100 1000 010 20 30 V DS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98 % 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD [V] Rev. 1.11 page 6 2004-02-09 |
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