BSO350N03 datasheet(1/9 Pages) INFINEON

Part #	BSO350N03

Description	OptiMOS2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSO350N03

OptiMOS®2 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC

• Dual n-channel

• Logic level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• Avalanche rated

• dv /dt rated

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

10 secs

steady state

Continuous drain current

I D

T A=25 °C

2)

65

A

T A=70 °C

2)

4.8

4

Pulsed drain current

I D,pulse

T A=25 °C

3)

Avalanche energy, single pulse

E AS

I D=6 A, R GS=25 Ω

mJ

Reverse diode dv /dt

dv /dt

I D=6 A, V DS=20 V,

di /dt =200 A/µs,

T j,max=150 °C

kV/µs

Gate source voltage

V GS

V

Power dissipation

P tot

T A=25 °C

2)

2.0

1.4

W

Operating and storage temperature

T j, T stg

°C

IEC climatic category; DIN IEC 68-1

• Qualified according to JEDEC

1 for target applications

Value

55/150/56

-55 ... 150

±20

6

8

24

V DS

30

V

R DS(on),max

35

m

Ω

I D

6

A

Product Summary

Type

Package

Ordering Code

Marking

BSO350N03

P-DSO-8

Q67042-S4217

350N3

P-DSO-8

Rev. 1.11

page 1

2004-02-09

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