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BSS223PW Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # BSS223PW
Description  OptiMOS -P Small-Signal-Transistor
Download  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSS223PW Datasheet(HTML) 3 Page - Infineon Technologies AG

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2002-07-04
Page 3
Preliminary data
BSS 223PW
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
gfs
çVDSç≥2*çIDç*RDS(on)max
ID=-0.31A
0.35
0.7
-
S
Input capacitance
Ciss
VGS=0, VDS=-15V,
f=1MHz
-
45
56
pF
Output capacitance
Coss
-
21
26
Reverse transfer capacitance
Crss
-
17
22
Turn-on delay time
td(on)
VDD=-10V, VGS=-4.5V,
ID=-0.39A, RG=6Ω
-
3.8
5.7
ns
Rise time
tr
-
5
7.5
Turn-off delay time
td(off)
-
5.1
7.6
Fall time
tf
-
3.2
4.8
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=-10V, ID=-0.39A
-
-0.04
-0.05
nC
Gate to drain charge
Qgd
-
-0.4
-0.5
Gate charge total
Qg
VDD=-10V, ID=-0.39A,
VGS=0 to -4.5V
-
-0.5
-0.62
Gate plateau voltage
V(plateau) VDD=-10V, ID=-0.39A
-
-2.2
-2.7
V
Reverse Diode
Inverse diode continuous
forward current
IS
TA=25°C
-
-
-0.39
A
Inv. diode direct current, pulsed ISM
-
-
-1.56
Inverse diode forward voltage
VSD
VGS=0, IF=-0.39
-
-1
-1.33
V
Reverse recovery time
trr
VR=-10V, |IF| = |lD|,
diF/dt=100A/µs
-
7.6
9.5
ns
Reverse recovery charge
Qrr
-
1.1
1.4
nC


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