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BSS223PW Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSS223PW Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2002-07-04 Page 3 Preliminary data BSS 223PW Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs çVDSç≥2*çIDç*RDS(on)max ID=-0.31A 0.35 0.7 - S Input capacitance Ciss VGS=0, VDS=-15V, f=1MHz - 45 56 pF Output capacitance Coss - 21 26 Reverse transfer capacitance Crss - 17 22 Turn-on delay time td(on) VDD=-10V, VGS=-4.5V, ID=-0.39A, RG=6Ω - 3.8 5.7 ns Rise time tr - 5 7.5 Turn-off delay time td(off) - 5.1 7.6 Fall time tf - 3.2 4.8 Gate Charge Characteristics Gate to source charge Qgs VDD=-10V, ID=-0.39A - -0.04 -0.05 nC Gate to drain charge Qgd - -0.4 -0.5 Gate charge total Qg VDD=-10V, ID=-0.39A, VGS=0 to -4.5V - -0.5 -0.62 Gate plateau voltage V(plateau) VDD=-10V, ID=-0.39A - -2.2 -2.7 V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -0.39 A Inv. diode direct current, pulsed ISM - - -1.56 Inverse diode forward voltage VSD VGS=0, IF=-0.39 - -1 -1.33 V Reverse recovery time trr VR=-10V, |IF| = |lD|, diF/dt=100A/µs - 7.6 9.5 ns Reverse recovery charge Qrr - 1.1 1.4 nC |
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