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U1ZB9.1 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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U1ZB9.1 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page ![]() U1ZB6.8~U1ZB390 2001-07-11 1 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1.0 W l Zener Voltage : VZ = 6.8~390 V l Surface Mounting Plastic Mold Package MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Power Dissipation P 1.0 W Junction Temperature Tj −40~150 °C Storage Temperature Range Tstg −40~150 °C STANDARD SOLDERING PAD MARK Unit: mm JEDEC ― JEITA ― TOSHIBA 3−4D1A Weight: 0.06g |
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