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2SB1153 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1153 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB1153 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -170V(Min) · Good Linearity of hFE · Wide Area of Safe Operation APPLICATIONS · Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -170 V VCEO Collector-Emitter Voltage -170 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICP Collector Current-Pulse -25 A PC Collector Power Dissipation @ TC=25℃ 150 W Collector Power Dissipation @ Ta=25℃ 3.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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