KTA1298 datasheet(1/2 Pages) HOTTECH

Part #	KTA1298

Description	Plastic-Encapsulate Transistors

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Low frequency power amplifier application

Power switching application

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-35

V

Collector-Emitter Voltage

V

CEO

-30

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-800

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=- 1mA,IE=0

-35

V

Collector-emitter breakdown voltage

VCEO

IC= -10mA, IB=0

-30

V

Emitter-base breakdown voltage

VEBO

IE=-1mA, IC=0

-5

V

Collector

cut-off

current

ICBO

VCB=-30 V,IE=0

-0.1

μA

Emitter

cut-off

current

IEBO

VEB= -5V,IC=0

-0.1

μA

DC

current

gain

hFE(1)

VCE=-1V, IC=-100mA

100

320

hFE(2)

VCE=-1V, IC=-800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -20mA

-0.4

V

Base- emitter voltage

VBE

VCE=-1V, IC=-10mA

-0.5

-0.8

V

Transition

frequency

fT

VCE=-5V, IC=-10mA,

120

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0,f=1MHz

13

pF

CLASSIFICATION OF

hFE

Marking

IO

IY

Range

100-200

160-320

KTA1298(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

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