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BDY53 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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2 / 3 page COMSET SEMICONDUCTORS 2/3 BDY53 – BDY54 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDY53 60 - - VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=100 mA, IB=0 BDY54 120 - - V IEBO Emitter-Base Cutoff Current VEB=7 V BDY53 BDY54 -- 3.0 mA VCE=100 V VBE=-1.5 V TCASE=150°C BDY53 -- ICEX Collector-Emitter Cutoff Current VCE=150 V VBE=-1.5 V TCASE=150°C BDY54 -- 15 mA IC=4.0 A, IB=0.4 A BDY53 BDY54 -- 1.1 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=7.0 A, IB=1.4 A BDY53 BDY54 -- 2.2 V IC=4.0 A, IB=0.4 A BDY53 BDY54 -- 2 VBE(SAT) Base-Emitter Voltage (*) IC=7.0 A, IB=1.4 A BDY53 BDY54 -- 2.5 V h21E Static Forward Current transfer ratio (*) VCE=1.5 V, IC=2 A BDY53 BDY54 20 -60 V fT Transition Frequency VCE=4.0 V, IC=0.5 A, f=10 MHz BDY53 BDY54 20 - - MHz td + tr Turn-on time IC=5 A, IB=1 A BDY53 BDY54 -0.3 - µs ts + tf Turn-off time IC=5 A, IB1=1 A, IB2=-0.5 A BDY53 BDY54 -1.8 - µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
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