BSL215C datasheet(2/13 Pages) INFINEON

Part #	BSL215C

Description	OptiMOS?? OptiMOS??P 2 Small Signal Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 13 page

BSL215C

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

P

N

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

P V (BR)DSS V GS=0 V, I D=-250 µA

-

-20

V

N

V GS=0 V, I D=250 µA

20

-

Gate threshold voltage

P V GS(th)

V DS=V GS, I D=-11 µA

-1.2

-0.9

-0.6

N

V DS=V GS, I D=3.7 µA

0.7

0.95

1.2

Zero gate voltage drain current

P I DSS

V DS=-20 V, V GS=0 V,

T j=25 °C

-

-1

µA

N

V DS=20 V, V GS=0 V,

T j=25 °C

-

1

P

V DS=-20 V, V GS=0 V,

T j=150 °C

-

-100

N

V DS=20 V, V GS=0 V,

T j=150 °C

-

100

Gate-source leakage current

P

N

P R DS(on)

V GS=-2.5V, I D=-1.1 A

-

163

280

m

W

N

V GS=2.5 V, I D=0.7 A

-

173

250

P

V GS=-4.5V, I D=-1.5 A

-

102

150

N

V GS=4.5 V, I D=1.5 A

-

108

140

Transconductance

P g fs

|V DS|>2|I D|R DS(on)max,

I D=-1.2 A

-

4.5

-

S

N

|V DS|>2|I D|R DS(on)max,

I D=1.2 A

-

4

-

±100

R thJA

nA

I GSS

-

V GS=±12 V, V DS=0 V

-

Values

2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both

sides of the PCB

Drain-source on-state

resistance

Thermal resistance, junction -

ambient

-

250

minimal footprint

2)

K/W

Rev.2.2

page 2

2013-11-06

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