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BSL214N Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # BSL214N
Description  OptiMOS?? Small-Signal-Transistor
Download  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSL214N Datasheet(HTML) 7 Page - Infineon Technologies AG

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BSL214N
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=1.5 A pulsed
parameter: T j(start)
parameter: V DD
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
16
17
18
19
20
21
22
23
24
25
-60
-20
20
60
100
140
T
j [°C]
4 V
10 V
16 V
0
1
2
3
4
5
6
0
0.25
0.5
0.75
1
Q
gate [nC]
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
t
AV [µs]
V GS
Q gate
V gs(th)
Q g(th)
Q gs
Q gd
Q sw
Q g
Rev 2.3
page 7
2013-11-06


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