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BSL214N Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSL214N Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page  BSL214N Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 µA 20 - - V Gate threshold voltage V GS(th) V DS=VGS, I D=3.7 µA 0.7 0.95 1.2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 mA V DS=20 V, V GS=0 V, T j=150 °C - - 100 Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=0.7 A - 173 250 m W V GS=4.5 V, I D=1.5 A - 108 140 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.2 A 4 - S Values 2)Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both both sides of the PCB. Rev 2.3 page 2 2013-11-06 |
Similar Part No. - BSL214N |
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Similar Description - BSL214N |
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