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STM32F427AI Datasheet(PDF) 105 Page - STMicroelectronics

Part # STM32F427AI
Description  ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT
PDF  239 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F427AI Datasheet(HTML) 105 Page - STMicroelectronics

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DocID024030 Rev 9
105/238
STM32F427xx STM32F429xx
Electrical characteristics
197
Table 28. Typical and maximum current consumptions in Standby mode
Symbol
Parameter
Conditions
Typ(1)
Max(2)
Unit
TA = 25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
VDD =
1.7 V
VDD=
2.4 V
VDD =
3.3 V
VDD = 3.6 V
IDD_STBY
Supply current
in Standby
mode
Backup SRAM ON, low-speed
oscillator (LSE) and RTC ON
2.80
3.00
3.60
7.00
19.00
36.00
µA
Backup SRAM OFF, low-
speed oscillator (LSE) and
RTC ON
2.30
2.60
3.10
6.00
16.00
31.00
Backup SRAM ON, RTC and
LSE OFF
2.30
2.50
2.90
6.00(3) 18.00(3) 35.00(3)
Backup SRAM OFF, RTC and
LSE OFF
1.70
1.90
2.20
5.00(3) 15.00(3) 30.00(3)
1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset
OFF), the typical current consumption is reduced by additional 1.2 µA.
2. Based on characterization, not tested in production unless otherwise specified.
3. Based on characterization, tested in production.
Table 29. Typical and maximum current consumptions in VBAT mode
Symbol
Parameter
Conditions(1)
Typ
Max(2)
Unit
TA = 25 °C
TA = 85 °C
TA =
105 °C
VBAT =
1.7 V
VBAT=
2.4 V
VBAT =
3.3 V
VBAT = 3.6 V
IDD_VBAT
Backup
domain supply
current
Backup SRAM ON, low-speed
oscillator (LSE) and RTC ON
1.28
1.40
1.62
6
11
µA
Backup SRAM OFF, low-speed
oscillator (LSE) and RTC ON
0.66
0.76
0.97
3
5
Backup SRAM ON, RTC and
LSE OFF
0.70
0.72
0.74
5
10
Backup SRAM OFF, RTC and
LSE OFF
0.10
0.10
0.10
2
4
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed by characterization results.



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