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COP8SGB540L6 Datasheet(PDF) 8 Page - National Semiconductor (TI) |
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COP8SGB540L6 Datasheet(HTML) 8 Page - National Semiconductor (TI) |
8 / 62 page DC Electrical Characteristics (Continued) −40˚C ≤ T A ≤ +85˚C unless otherwise specified. Parameter Conditions Min Typ Max Units Output Current Levels D Outputs Source V CC = 4.5V, VOH = 3.3V −0.4 mA V CC = 2.7V, VOH = 1.8V -0.2 mA Sink V CC = 4.5V, VOL = 1.0V 10 mA V CC = 2.7V, VOL = 0.4V 2 mA All Others Source (Weak Pull-Up Mode) V CC = 4.5V, VOH = 2.7V −10.0 −110 µA V CC = 2.7V, VOH = 1.8V -2.5 -33 µA Source (Push-Pull Mode) V CC = 4.5V, VOH = 3.3V −0.4 mA V CC = 2.7V, VOH = 1.8V -0.2 mA Sink (Push-Pull Mode) V CC = 4.5V, VOL = 0.4V V CC = 2.7V, VOL = 0.4V 1.6 0.7 mA mA TRI-STATE Leakage V CC = 5.5V −2 +2 µA Allowable Sink Current per Pin (Note 9) D Outputs and L0 to L3 15 mA All Others 3mA Maximum Input Current without Latchup (Note 7) Room Temp. ±200 mA RAM Retention Voltage, Vr 2.0 V V CC Rise Time from a VCC ≥ 2.0V (Note 10) 12 µs EPROM Data Retenton (Note 8), (Note 9) T A = 55˚C >29 years Input Capacitance (Note 9) 7 pF Load Capacitance on D2 (Note 9) 1000 pF AC Electrical Characteristics −40˚C ≤ T A ≤ +85˚C unless otherwise specified. Parameter Conditions Min Typ Max Units Instruction Cycle Time (t C) Crystal/Resonator, External 4.5V ≤ V CC ≤ 5.5V 0.67 µs 2.7V ≤ V CC ≤ 4.5V 2 µs R/C Oscillator (Internal) 4.5V ≤ V CC ≤ 5.5V 2 µs Frequency Variation (Note 9) 4.5V ≤ V CC ≤ 5.5V ±35 % External CKI Clock Duty Cycle (Note 9) fr = Max 45 55 % Rise Time (Note 9) fr = 10 MHz Ext Clock 8 ns Fall Time (Note 9) fr = 10 MHz Ext Clock 5 ns MICROWIRE Setup Time (t UWS) (Note 11) 20 ns MICROWIRE Hold Time (t UWH) (Note 11) 56 ns MICROWIRE Output Propagation Delay (t UPD) (Note 11) 220 ns Input Pulse Width (Note 9) Interrupt Input High Time 1 t C Interrupt Input Low Time 1 t C Timer 1, 2, 3, Input High Time 1 t C Timer 1 2, 3, Input Low Time 1 t C Reset Pulse Width 1 µs Note 3: tC = Instruction cycle time. www.national.com 8 |
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