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R5F104FAD Datasheet(PDF) 123 Page - Renesas Technology Corp |
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R5F104FAD Datasheet(HTML) 123 Page - Renesas Technology Corp |
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123 / 213 page ![]() RL78/G14 2. ELECTRICAL SPECIFICATIONS (TA = -40 to +85 °C) R01DS0053EJ0330 Rev. 3.30 Page 123 of 208 Aug 12, 2016 2.7 RAM Data Retention Characteristics Note The value depends on the POR detection voltage. When the voltage drops, the RAM data is retained before a POR reset is effected, but RAM data is not retained when a POR reset is effected. 2.8 Flash Memory Programming Characteristics Note 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite. Note 2. When using flash memory programmer and Renesas Electronics self-programming library Note 3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. 2.9 Dedicated Flash Memory Programmer Communication (UART) (TA = -40 to +85°C, VSS = 0V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Data retention supply voltage VDDDR 1.46 Note 5.5 V (TA = -40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit System clock frequency fCLK 1.8 V ≤ VDD ≤ 5.5 V 1 32 MHz Number of code flash rewrites Notes 1, 2, 3 Cerwr Retained for 20 years TA = 85°C 1,000 Times Number of data flash rewrites Notes 1, 2, 3 Retained for 1 year TA = 25°C 1,000,000 Retained for 5 years TA = 85°C 100,000 Retained for 20 years TA = 85°C 10,000 (TA = -40 to +85°C, 1.8 V ≤ EVDD0 = EVDD1 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Transfer rate During serial programming 115,200 1,000,000 bps VDD STOP instruction execution Standby release signal (interrupt request) STOP mode RAM data retention Operation mode VDDDR |
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