VN5E025MJ-E datasheet(9/34 Pages) STMICROELECTRONICS

Part #	VN5E025MJ-E

Description	Single channel high side driver with analog current sense for automotive applications

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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DocID16373 Rev 2

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VN5E025MJ-E

Electrical specifications

33

IL(off1)

Off-state output current

VIN = VOUT = 0V; VCC = 13V;

Tj = 25°C

00.01

3

µA

VIN = VOUT = 0V; VCC = 13V;

Tj = 125°C

05

µA

VF

Output - VCC diode

voltage

-IOUT = 2A; Tj = 150°C

0.7

V

1.

PowerMOS leakage included.

Table 6. Switching characteristics (VCC=13V, Tj=25°C)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

RL = 4.3Ω (see Figure 5)—

15

—

µs

td(off)

Turn-off delay time

RL = 4.3Ω (see Figure 5)—

40

—

µs

(dVOUT/dt)on Turn-on voltage slope

RL = 4.3Ω

—

See

Figure 23

—V

/µs

(dVOUT/dt)off Turn-off voltage slope

RL = 4.3Ω

—

See

Figure 25

—V

/µs

WON

Switching energy losses

during twon

RL = 4.3Ω (see Figure 5)—

0.4

—

mJ

WOFF

Switching energy losses

during twoff

RL = 4.3Ω (see Figure 5)—

0.5

—

mJ

Table 7. Logic inputs

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VIL

Input low level voltage

0.9

V

IIL

Low level input current

VIN = 0.9V

1

µA

VIH

Input high level voltage

2.1

V

IIH

High level input current

VIN = 2.1V

10

µA

VI(hyst)

Input hysteresis voltage

0.25

V

VICL

Input clamp voltage

IIN = 1mA

5.5

7

V

IIN = -1mA

-0.7

V

VCSDL

CS_DIS low level voltage

0.9

V

ICSDL

Low level CS_DIS current

VCSD = 0.9V

1

µA

VCSDH

CS_DIS high level voltage

2.1

V

ICSDH

High level CS_DIS current

VCSD = 2.1V

10

µA

VCSD(hyst) CS_DIS hysteresis voltage

0.25

V

VCSCL

CS_DIS clamp voltage

ICSD = 1mA

5.5

7

V

ICSD = -1mA

-0.7

V

Table 5. Power section (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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