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VN5E025MJ-E Datasheet(PDF) 22 Page - STMicroelectronics |
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VN5E025MJ-E Datasheet(HTML) 22 Page - STMicroelectronics |
22 / 34 page Application information VN5E025MJ-E 22/35 DocID16373 Rev 2 3 Application information Figure 29. Application schematic 3.1 GND protection network against reverse battery This section provides two solutions for implementing a ground protection network against reverse battery. 3.1.1 Solution 1: resistor in the ground line (RGND only) This can be used with any type of load. The following show how to dimension the RGND resistor: 1. RGND ≤ 600mV / (IS(on)max) 2. RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet. Power dissipation in RGND (when VCC < 0 during reverse battery situations) is: PD = (-VCC) 2/R GND This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that, if the microprocessor ground is not shared by the device ground, then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output |
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