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VND5E006ASP-E Datasheet(PDF) 8 Page - STMicroelectronics |
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VND5E006ASP-E Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 37 page Electrical specifications VND5E006ASP-E 8/37 DocID17362 Rev 6 2.2 Thermal data VESD Electrostatic discharge (Human Body Model: R = 1.5 K Ω; C = 100 pF) – Input – Current sense – CS_DIS – Output –VCC 4000 2000 4000 5000 5000 V VESD Charge device model (CDM-AEC-Q100-011) 750 V Tj Junction operating temperature -40 to 150 °C Tstg Storage temperature -55 to 150 °C Table 3. Absolute maximum ratings (continued) Symbol Parameter Value Unit Table 4. Thermal data Symbol Parameter Maximum value Unit Rthj-case Thermal resistance junction-case (MAX) (with one channel ON) 0.4 °C/W Rthj-amb Thermal resistance junction-ambient See Figure 36 °C/W |
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