VND5E050ACKTR-E datasheet(10/43 Pages) STMICROELECTRONICS

Part #	VND5E050ACKTR-E

Description	Double channel high-side driver with analog current sense for automotive applications

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical specifications

VND5E050ACJ-E, VND5E050ACK-E

10/43

Doc ID 022515 Rev 2

IS

Supply current

Off-state; VCC =13V; Tj =25°C;

VIN =VOUT =VSENSE =VCSD =0V

2(2)

5(2)

µA

On-state; VCC =13 V; VIN =5V;

IOUT =0 A

36

mA

IL(off1)

Off-state output current

(1)

VIN =VOUT = 0 V; VCC =13 V;

Tj =25°C

00.01

3

µA

VIN =VOUT =0 V; VCC =13V;

Tj = 125°C

05

VF

Output - VCC diode

voltage(1)

-IOUT = 4 A; Tj = 150°C

0.7

V

1.

For each channel.

2.

PowerMOS leakage included.

Table 6.

Switching (VCC = 13V; Tj = 25°C)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

RL =6.5Ω (see Figure 6)—

20

—

µs

td(off)

Turn-off delay time

RL =6.5Ω (see Figure 6)—

45

—

µs

dVOUT/dt(on)

Turn-on voltage slope RL =6.5Ω

—

See

Figure 26

—V

/µs

dVOUT/dt(off)

Turn-off voltage slope

RL =6.5Ω

—

See

Figure 28

—V

/µs

WON

Switching energy

losses during twon

RL =6.5Ω (see Figure 6)

—

0.15

—

mJ

WOFF

Switching energy

losses during twoff

RL =6.5Ω (see Figure 6)—

0.3

—

mJ

Table 7.

Logic inputs

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VIL

Input low level voltage

0.9

V

IIL

Low level input current

VIN =0.9 V

1

µA

VIH

Input high level voltage

2.1

V

IIH

High level input current

VIN =2.1 V

10

µA

VI(hyst)

Input hysteresis voltage

0.25

V

VICL

Input clamp voltage

IIN =1 mA

5.5

7

V

IIN =-1 mA

-0.7

VCSDL

CS_DIS low level voltage

0.9

V

ICSDL

Low level CS_DIS current

VCSD =0.9 V

1

µA

VCSDH

CS_DIS high level voltage

2.1

V

Table 5.

Power section (continued)

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

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