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VND5E050ACKTR-E Datasheet(PDF) 24 Page - STMicroelectronics

Part # VND5E050ACKTR-E
Description  Double channel high-side driver with analog current sense for automotive applications
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VND5E050ACKTR-E Datasheet(HTML) 24 Page - STMicroelectronics

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Application information
VND5E050ACJ-E, VND5E050ACK-E
24/43
Doc ID 022515 Rev 2
3
Application information
Figure 32.
Application schematic
Note:
Channel 2 has the same internal circuit as channel 1.
3.1
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1
Solution 1: resistor in the ground line (RGND only)
This can be used with any type of load.
The following is an indication on how to resize the RGND resistor.
1.
RGND ≤ 600 mV / (IS(on)max)
2.
RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power dissipation in RGND (when VCC < 0: during reverse battery situations) is:
PD = (-VCC)
2/R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift varies depending on how many devices are on in case of several high side
drivers sharing the same RGND.
VCC
GND
OUTPUT
DGND
RGND
Dld
ΜCU
+5V
VGND
CS_DIS
INPUT
Rprot
Rprot
CURRENT SENSE
RSENSE
Rprot
CEXT


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