2SB1590K datasheet(2/6 Pages) FOSHAN

Part #	2SB1590K

Description	Silicon PNP transistor in a SOT-23 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SB1590K

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-15

V

Collector to Emitter Voltage

VCEO

-15

V

Emitter to Base Voltage

VEBO

-6.0

V

Collector Current

IC

-1.0

A

Collector Current

ICM

-3.0

A

Collector Power Dissipation

PC

200

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-50μA

IB=0

-15

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=-1.0mA

IE=0

-15

V

Emitter to Base Breakdown

Voltage

VEBO

IE=-50μA

IC=0

-6.0

V

Collector Cut-Off Current

ICBO

VCB=-12V

IE=0

-0.5

μA

Emitter Cut-Off Current

IEBO

VCE=-5.0V

IC=0

-0.5

μA

hFE(1)

VCE=-2.0V

IC=-50mA

120

270

DC Current Gain

hFE(2)

VCE=-2.0V

IC=-800mA

80

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=-0.4A

IB=-20mA

-0.3

V

Transition Frequency

fT

VCE=-2.0V

IE=50mA

f=100MHz

200

MHz

Collector Output Capacitance

Cob

VCB=-10V

IE=0A

f=1.0MHz

15

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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2SB1590K Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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