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IR5001S Datasheet(PDF) 8 Page - International Rectifier |
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IR5001S Datasheet(HTML) 8 Page - International Rectifier |
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8 / 13 page  8 IR5001 www.irf.com DETAILED PIN DESCRIPTION Vline and Vcc Vline and Vcc are the input and output pins of the internal shunt regulator. The internal shunt regulator regulates the Vcc voltage at ~12V. The Vcc pin should always be by-passed with a ceramic capacitor to the Gnd pin. Both Vline and Vcc pins can be used for biasing the IR5001, as shown in Fig. 16. The Vline pin is designed to bias the IR5001 directly when the available bias voltage is above 25V and less than 100V (targeted at typical 36V – 75V telecom applications). This connection is shown in Fig 16.a. If the available Vbias voltage is lower than 25V, then the IC must be biased using Vcc pin and an external bias resistor as shown in Fig. 16.b. If the available bias voltage is above 100V, both Vline and Vcc pins can be used with an external bias resistor. For calculation of the proper bias resistor value, see example below. When the Vcc pin is used for biasing the IR5001, the Vbias must always be higher than the maximum value of the Vcc UVLO threshold (10.9V). The Rbias resistor should always be connected between the Vbias voltage source and Vcc pin. The Rbias resistor is selected to provide adequate Icc current for the IC. The minimum required Icc to guarantee proper IC operation under all conditions is 0.5mA. The maximum Icc is specified at 5mA. Vbias IR5001 Vcc FETch INP INN Gnd OUT FETst Vline + a) b) Vbias IR5001 Vcc FETch INP INN Gnd OUT FETst Vline Rbias + Figue 16 - Biasing options for IR5001 An example of Rbias calculation is given below. Vbias voltages used in the example are referenced to IR5001 Gnd: Vbias min = 12V Vbias max = 16V Rbias = (Vbias min – Vcc UVLOmax) / Icc min = = (12V – 10.9V) / 0.5mA = 2.2kOhm Next, using a minimum Vcc (10.2V), verify that Icc with the selected Rbias will be less than 5mA: Icc max = (Vbias max – Vcc min)/Rbias = = (16V - 10.2V) / 2.2kOhm = 2.6mA Since 2.6mA is below 5mA max Icc, the calculated Rbias (2.2kOhm) can be used in this design. INP and INN Inputs INP and INN are the inputs of the internal high- speed comparator. Both pins have integrated on- board voltage clamps and high-voltage 70kOhm resistors. In a typical application, INP should be connected to the source of the N-FET and INN to the drain. To improve the noise immunity, the connections from INN and INP pins to the source and drain terminals of the N-FET should be as short as possible. The (INP – INN) voltage difference determines the state of the Vout pin of the IR5001. When the body diode of the Active ORing N-FET is forward- biased and the current first starts flowing, the voltage difference INP – INN will quickly rise toward ~700mV (typical body diode forward voltage drop). As soon as this voltage exceeds Vhyst – Vos (27mV typical), the Vout of the IR5001 will be pulled high, turning the channel of the active ORing FET on. As the channel of the N-FET becomes fully enhanced, the (INP – INN) will reduce and stabilize at the value determined by the source-drain current, Isd, and Rds(on) of the N-FET: (INP – INN) steady state = Isd * RDS(on). If for some reason (due to a short-circuit failure of the source, for example), the current reverses direction and tries to flow from drain to source, the (INP – INN) will become negative; The IR5001 will then quickly pull its output low, switching the ORing FET off. For considerations regarding the selection of the Active ORing N-FET and RDS(on), see Applications Information Section. The offset voltage of the internal high-speed comparator is centered around negative 4mV, and is always less than 0mV. This asymmetrical offset |
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