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2N2222A Datasheet, PDF

Search Partnumber : Included a word "2N2222A" - Total : 22 ( 1/2 Page)
ManufacturerPart #DatasheetDescription
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Central Semiconductor C...
CP191-2N2222A-CT CENTRAL-CP191-2N2222A-CT Datasheet
465Kb/9P
P-Channel JFET Die
R1 17-January 2018
CP191-2N2222A-CT CENTRAL-CP191-2N2222A-CT Datasheet
530Kb/9P
PNP - High Voltage Transistor Die
R0 8-August 2019
CP191-2N2222A-WN CENTRAL-CP191-2N2222A-WN Datasheet
465Kb/9P
P-Channel JFET Die
R1 17-January 2018
CP191-2N2222A-WN CENTRAL-CP191-2N2222A-WN Datasheet
530Kb/9P
PNP - High Voltage Transistor Die
R0 8-August 2019
CP191-2N2222A-WR CENTRAL-CP191-2N2222A-WR Datasheet
465Kb/9P
P-Channel JFET Die
R1 17-January 2018
CP191-2N2222A-WR CENTRAL-CP191-2N2222A-WR Datasheet
530Kb/9P
PNP - High Voltage Transistor Die
R0 8-August 2019
CP191-2N2222A-WS CENTRAL-CP191-2N2222A-WS Datasheet
465Kb/9P
P-Channel JFET Die
R1 17-January 2018
CP191-2N2222A-WS CENTRAL-CP191-2N2222A-WS Datasheet
530Kb/9P
PNP - High Voltage Transistor Die
R0 8-August 2019
CP191V-2N2222A-CT CENTRAL-CP191V-2N2222A-CT Datasheet
465Kb/9P
P-Channel JFET Die
R1 17-January 2018
CP191V-2N2222A-CT CENTRAL-CP191V-2N2222A-CT Datasheet
530Kb/9P
PNP - High Voltage Transistor Die
R0 8-August 2019
CP191V-2N2222A-WN CENTRAL-CP191V-2N2222A-WN Datasheet
465Kb/9P
P-Channel JFET Die
R1 17-January 2018
CP191V-2N2222A-WN CENTRAL-CP191V-2N2222A-WN Datasheet
530Kb/9P
PNP - High Voltage Transistor Die
R0 8-August 2019
CP191V-2N2222A-WR CENTRAL-CP191V-2N2222A-WR Datasheet
465Kb/9P
P-Channel JFET Die
R1 17-January 2018
CP191V-2N2222A-WR CENTRAL-CP191V-2N2222A-WR Datasheet
530Kb/9P
PNP - High Voltage Transistor Die
R0 8-August 2019
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Microsemi Corporation
JANS2N2222AUB MICROSEMI-JANS2N2222AUB Datasheet
142Kb/6P
ELECTRICAL CHARACTERISTICS (TA = +25째C, unless otherwise noted)
JANTX2N2222AUB MICROSEMI-JANTX2N2222AUB Datasheet
58Kb/2P
NPN SILICON SWITCHING TRANSISTOR
120101
JANTX2N2222AUB MICROSEMI-JANTX2N2222AUB Datasheet
142Kb/6P
TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR
MSR2N2222AUB MICROSEMI-MSR2N2222AUB Datasheet
781Kb/7P
Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900
Rev. 1
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ON Semiconductor
P2N2222AG ONSEMI-P2N2222AG Datasheet
165Kb/6P
Amplifier Transistors(NPN Silicon)
April, 2007 -- Rev. 5
P2N2222ARL1G ONSEMI-P2N2222ARL1G Datasheet
165Kb/6P
Amplifier Transistors(NPN Silicon)
April, 2007 -- Rev. 5

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2N2222A Datasheet, PDF [Distributor]

DistributorPart # Manufacturer
Datasheet
DescriptionBuy Now
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Element14
2N2222A

part
NTE ELECTRONICS

BIPOLAR TRANSISTOR, NPN, 40V, TO-18; Tra; BIPOLAR TRANSISTOR, NPN, 40V, TO-18; Transistor Polarity:N...
2N2222A

part
MULTICOMP PRO

TRANSISTOR, NPN, 40V, 800MA, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V;...




Brief Description of 2N2222A


The 2N2222A is a widely used NPN bipolar junction transistor (BJT) that is commonly used for amplification and switching in electronic circuits. It is part of the 2N22xx series of transistors, which are known for their general-purpose applications. Here are some key features and specifications of the 2N2222A transistor:

Polarity: NPN (Negative-Positive-Negative).

The 2N2222A is constructed with an N-type layer in the middle, sandwiched between P-type layers on the outside.
Maximum Collector Current (Ic): Typically around 800 mA.

This is the maximum current that can flow from the collector to the emitter when the transistor is in the on state.
Maximum Collector-Base Voltage (Vcbo): Typically around 75V.

This is the maximum voltage that can be applied between the collector and base terminals while keeping the emitter terminal open.
Maximum Collector-Emitter Voltage (Vceo): Typically around 30V.

This is the maximum voltage that can be applied between the collector and emitter terminals while the base is open.
Gain (hfe or Beta): Typically around 100 to 300.

The gain, denoted as hfe or Beta, represents the amplification capability of the transistor. It shows how much the collector current is amplified compared to the base current.
Package: The 2N2222A is commonly available in TO-18 or TO-92 packages, which are small and widely used in various electronic circuits.

Applications: The 2N2222A transistor is used in a wide range of electronic circuits, including amplifiers, switching applications, signal processing, oscillators, and more.

Equivalent for 2N2222A


The 2N2222A is a widely used NPN bipolar junction transistor (BJT) designed for general-purpose low-power amplifying and switching applications. It features a maximum collector current of 800mA, a collector-emitter voltage of 40V, and operates efficiently at high speeds with a transition frequency around 250MHz.
COMPONENTS 101

Several transistors can serve as replacements for the 2N2222A, offering similar electrical characteristics and functionalities:

PN2222A:

A direct equivalent to the 2N2222A, commonly found in a TO-92 plastic package.
Shares similar electrical specifications, including maximum collector current and voltage ratings.
Note that the pin configuration may differ; verify the pinout before substitution.
COMPONENTS INFO
2N3904:

General-purpose NPN transistor with a maximum collector current of 200mA and a collector-emitter voltage of 40V.
Suitable for low-power applications where the current requirements are within its ratings.
Offers a higher transition frequency, making it ideal for high-speed switching.
COMPONENTS 101
BC547:

NPN transistor with a maximum collector current of 100mA and a collector-emitter voltage of 45V.
Commonly used in European designs for low-current switching and amplification.
Ensure the lower current rating aligns with your application needs.
COMPONENTS 101
2N2219:

NPN transistor with a maximum collector current of 800mA and a collector-emitter voltage of 50V.
Encapsulated in a TO-39 metal can package, offering better power dissipation.
Suitable for applications requiring robust thermal performance.
COMPONENTS INFO
MPS2222A:

NPN transistor similar to the 2N2222A, available in a TO-92 package.
Features comparable electrical characteristics, including current and voltage ratings.
Verify the pin configuration, as it may differ from the 2N2222A.
EL COMPONENT
When selecting a replacement, consider the following factors:

Electrical Specifications: Ensure the substitute transistor meets or exceeds the voltage, current, and power requirements of your application.
Package Type: Confirm that the physical package and pin configuration are compatible with your circuit layout.
Frequency Response: For high-speed applications, verify that the transition frequency of the replacement transistor is adequate.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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