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2N2222A Datasheet, PDF

Search Partnumber : End with "2N2222A" - Total : 11 ( 1/1 Page)

Manufacturer	Part #	Datasheet	Description
Central Semiconductor C...	CP191V-2N2222A	579Kb/3P	NPN - Small Signal Transistor Die
ON Semiconductor	JAN2N2222A	90Kb/3P	Small Signal Switching Transistor August, 2012 ??Rev. 1
Microsemi Corporation	JANS2N2222A	142Kb/6P	NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255
ON Semiconductor	JANTX2N2222A	90Kb/3P	Small Signal Switching Transistor August, 2012 ??Rev. 1
ON Semiconductor	JANTXV2N2222A	90Kb/3P	Small Signal Switching Transistor August, 2012 ??Rev. 1
Motorola, Inc	P2N2222A	238Kb/6P	Amplifier Transistors
ON Semiconductor	P2N2222A	165Kb/6P	Amplifier Transistors(NPN Silicon) April, 2007 -- Rev. 5
TRANSYS Electronics Lim...	P2N2222A	86Kb/3P	NPN SILICON PLANAR SWITCHING TRANSISTORS
Continental Device Indi...	P2N2222A	245Kb/4P	NPN SILICON PLANAR SWITCHING TRANSISTORS
SEMTECH ELECTRONICS LTD...	ST2N2222A	218Kb/4P	NPN Silicon Epitaxial Planar Transistor
Taiwan Semiconductor Co...	TS2N2222A	44Kb/3P	General Purpose NPN Transistor

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Brief Description of 2N2222A

The 2N2222A is a widely used NPN bipolar junction transistor (BJT) that is commonly used for amplification and switching in electronic circuits. It is part of the 2N22xx series of transistors, which are known for their general-purpose applications. Here are some key features and specifications of the 2N2222A transistor:

Polarity: NPN (Negative-Positive-Negative).

The 2N2222A is constructed with an N-type layer in the middle, sandwiched between P-type layers on the outside.
Maximum Collector Current (Ic): Typically around 800 mA.

This is the maximum current that can flow from the collector to the emitter when the transistor is in the on state.
Maximum Collector-Base Voltage (Vcbo): Typically around 75V.

This is the maximum voltage that can be applied between the collector and base terminals while keeping the emitter terminal open.
Maximum Collector-Emitter Voltage (Vceo): Typically around 30V.

This is the maximum voltage that can be applied between the collector and emitter terminals while the base is open.
Gain (hfe or Beta): Typically around 100 to 300.

The gain, denoted as hfe or Beta, represents the amplification capability of the transistor. It shows how much the collector current is amplified compared to the base current.
Package: The 2N2222A is commonly available in TO-18 or TO-92 packages, which are small and widely used in various electronic circuits.

Applications: The 2N2222A transistor is used in a wide range of electronic circuits, including amplifiers, switching applications, signal processing, oscillators, and more.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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