Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
2SK215-E
|
65Kb/6P
|
Silicon N Channel MOS FET
|
Toshiba Semiconductor |
2SK2150
|
486Kb/5P
|
SILICON N CHANNEL MOS TYPE
|
Inchange Semiconductor ... |
2SK2150
|
70Kb/2P
|
Fast Switching Speed
|
Sanyo Semicon Device |
2SK2151
|
84Kb/3P
|
Very High-Speed Switching Applications
|
2SK2152
|
82Kb/3P
|
Very High-Speed Switching Applications
|
2SK2154
|
81Kb/3P
|
Very High-Speed Switching Applications
|
VBsemi Electronics Co.,... |
2SK2154
|
959Kb/8P
|
N-Channel 30-V (D-S) MOSFET
|
2SK2154-TL-E
|
1Mb/6P
|
N-Channel 20-V (D-S)175 C MOSFET
|
NEC |
2SK2157
|
60Kb/6P
|
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
|
Renesas Technology Corp |
2SK2157
|
262Kb/8P
|
MOS FIELD EFFECT TRANSISTOR
1996
|
2SK2157C
|
221Kb/8P
|
N-CHANNEL MOSFET FOR SWITCHING
|
2SK2157C-T1-AY
|
221Kb/8P
|
N-CHANNEL MOSFET FOR SWITCHING
|
2SK2157C-T1-AZ
|
221Kb/8P
|
N-CHANNEL MOSFET FOR SWITCHING
|
NEC |
2SK2158
|
60Kb/6P
|
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
|
Guangdong Kexin Industr... |
2SK2158
|
45Kb/1P
|
MOS Field Effect Transistor
|
SHIKUES Electronics |
2SK2158
|
1Mb/3P
|
super highdense cell design for extremely low RDS
|
Renesas Technology Corp |
2SK2158
|
266Kb/8P
|
MOS FIELD EFFECT TRANSISTOR
1996
|
VBsemi Electronics Co.,... |
2SK2158-T1B-A
|
1,003Kb/8P
|
N-Channel 60-V (D-S) MOSFET
|
Renesas Technology Corp |
2SK2158A
|
258Kb/7P
|
MOS FIELD EFFECT TRANSISTOR
1996
|
2SK2158A-T1B-AT
|
258Kb/7P
|
MOS FIELD EFFECT TRANSISTOR
1996
|