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BC547B Datasheet, PDF

Search Partnumber : Match&Start with "BC547B" - Total : 58 ( 1/3 Page)

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	BC547B	193Kb/6P	Amplifier Transistors
Pan Jit International I...	BC547B	160Kb/5P	NPN GENERAL PURPOSE TRANSISTOR
Fairchild Semiconductor	BC547B	141Kb/6P	NPN Epitaxial Silicon Transistor
ON Semiconductor	BC547B	140Kb/6P	Amplifier Transistors(NPN Silicon) 1996 REV 1
STMicroelectronics	BC547B	53Kb/4P	SMALL SIGNAL NPN TRANSISTORS
Continental Device Indi...	BC547B	124Kb/5P	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
NXP Semiconductors	BC547B	47Kb/8P	NPN general purpose transistors 2004 Nov 25
SeCoS Halbleitertechnol...	BC547B	183Kb/3P	Elektronische Bauelemente
SUNMATE electronic Co.,...	BC547B	540Kb/4P	NPN SILICON AMPLIFIER TRANSISTOR
Siemens Semiconductor G...	BC547B	210Kb/6P	NPN Silicon Transistors
Micro Commercial Compon...	BC547B	228Kb/5P	NPN Silicon Amplifier Transistor 625mW
Micro Commercial Compon...	BC547B	341Kb/5P	NPN Silicon Amplifier Transistor 625mW
Fairchild Semiconductor	BC547B	26Kb/2P	NPN General Purpose Amplifier
Weitron Technology	BC547B	1Mb/5P	NPN General Purpose Transistor
Diotec Semiconductor	BC547B	148Kb/2P	General Purpose NPN Transistors
Diotec Semiconductor	BC547B	148Kb/2P	Si-Epitaxial PlanarTransistors
Micro Commercial Compon...	BC547B	301Kb/5P	NPN Silicon Amplifier Transistor 625mW
ARTSCHIP ELECTRONICS CO...	BC547B	51Kb/1P	NPN General Purpose Amplifier
ON Semiconductor	BC547B	91Kb/6P	Amplifier Transistors May, 2004 ??Rev. 4
List of Unclassifed Man...	BC547B	211Kb/3P	Transistor, NPN, TO-92

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Brief Description of BC547B

The BC547B is a commonly used NPN bipolar junction transistor (BJT) with three layers of semiconductor material: the emitter, base, and collector. It is part of the BC547 series of transistors and is widely used in electronic circuits for amplification and switching purposes. Here are some key features and specifications of the BC547B:

Type: NPN (Negative-Positive-Negative) transistor.

Polarity: The BC547B has a specific polarity, with the emitter being the negative (N) side, the base being the positive (P) side, and the collector being the negative (N) side.

Pin Configuration:

Emitter (E): The lead connected to the N-type semiconductor in the transistor.
Base (B): The lead connected to the P-type semiconductor in the transistor.
Collector (C): The lead connected to the N-type semiconductor that collects the current flowing through the transistor.
Maximum Collector Current (IC): The maximum current that can flow through the collector terminal. It is typically around 100 mA for the BC547B.

Maximum Collector-Emitter Voltage (VCE): The maximum voltage that can be applied between the collector and emitter terminals without causing breakdown. It is typically around 45V for the BC547B.

Maximum Power Dissipation (Ptot): The maximum power that the transistor can dissipate without overheating. It is typically around 500 mW for the BC547B.

Gain (hfe): The current gain of the transistor, representing the ratio of the output current to the input current. It is typically in the range of 110 to 800 for the BC547B.

Transition Frequency (ft): The frequency at which the current gain starts to decrease significantly. It is typically in the range of tens of megahertz for the BC547B.

Package: The BC547B is commonly available in a TO-92 package, which is a small, three-lead plastic package.

Applications: The BC547B is often used in low-power amplifier circuits, signal amplification, and switching applications in electronic circuits.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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