MMBT5551 Datasheet, PDF - Alldatasheet

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MMBT5551 Datasheet, PDF - Shenzhen Yixinwei Technology Co., Ltd.

Search Partnumber : Match&Start with "MMBT5551" - Select : 1 , Total : 130 ( 1/1 Page)

Manufacturer	Part #	Datasheet	Description
Shenzhen Yixinwei Techn...	MMBT5551	594Kb/3P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Brief Description of MMBT5551

MMBT5551 is a small signal NPN bipolar junction transistor (BJT) that is commonly used in low-power amplification and switching applications. It is a surface-mount device that is available in a small SOT-23 package.

The MMBT5551 transistor has a maximum collector-emitter voltage rating of 160V and a maximum collector current rating of 600mA. It also has a low noise figure, with a typical hFE (DC current gain) of 110 to 220 and a maximum saturation voltage of 0.3V.

Because of its low noise figure and high gain, the MMBT5551 transistor is frequently used in low-power audio amplifiers, preamplifiers, and other signal processing circuits. It can also be used in switching applications where low power loss and fast switching speeds are important.

When using the MMBT5551 transistor or any other BJT in a circuit, it's important to pay attention to its pinout and operating parameters to ensure that it is properly biased and operates within its safe operating limits.

Equivalent for MMBT5551

The MMBT5551 is a small signal NPN bipolar junction transistor (BJT) with a maximum collector current rating of 600mA and a maximum collector-emitter voltage rating of 160V. If you need to replace a MMBT5551 transistor, here are some options that you can consider:

2N3904: This is a widely used NPN BJT with a maximum collector current rating of 200mA and a maximum collector-emitter voltage rating of 40V. It can be used as a replacement for the MMBT5551 transistor in many low voltage applications.

BC547: This is another NPN BJT with a maximum collector current rating of 100mA and a maximum collector-emitter voltage rating of 45V. It is a popular replacement for the MMBT5551 transistor in many low current applications.

PN2222A: This is a NPN BJT with a maximum collector current rating of 600mA and a maximum collector-emitter voltage rating of 40V. It has similar characteristics to the MMBT5551 transistor and can be used as a replacement in many applications.

MPSA42: This is a high voltage NPN BJT with a maximum collector-emitter voltage rating of 300V and a maximum collector current rating of 500mA. It can be used as a replacement for the MMBT5551 transistor in applications where a higher voltage capability is required.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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