Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
SI4800
|
254Kb/13P |
N-channel enhancement mode field-effect transistor
Rev. 01-13 July 2001 |
Vishay Siliconix |
SI4800BDY
|
252Kb/9P |
N-Channel Reduced Qg, Fast Switching MOSFET
Rev. H, 29-Dec-08 |
SI4800BDY
|
252Kb/9P |
N-Channel Reduced Qg, Fast Switching MOSFET
Rev. H, 29-Dec-08 |
Si4800BDY
|
185Kb/8P |
N-Channel Reduced Qg, Fast Switching MOSFET
Rev. H, 29-Dec-08 |
SI4800BDY
|
184Kb/8P |
N-Channel Reduced Qg, Fast Switching MOSFET
01-Jan-2022 |
SI4800BDY-T1
|
252Kb/9P |
N-Channel Reduced Qg, Fast Switching MOSFET
Rev. H, 29-Dec-08 |
SI4800BDY-T1-E3
|
252Kb/9P |
N-Channel Reduced Qg, Fast Switching MOSFET
Rev. H, 29-Dec-08 |
VBsemi Electronics Co.,... |
SI4800BDY-T1-E3
|
1,007Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
Vishay Siliconix |
SI4800BDY
|
185Kb/8P |
N-Channel Reduced Qg, Fast Switching MOSFET
Rev. H, 29-Dec-08 |
SI4800BDY
|
184Kb/8P |
N-Channel Reduced Qg, Fast Switching MOSFET
01-Jan-2022 |
SI4800BD
|
184Kb/8P |
N-Channel Reduced Qg, Fast Switching MOSFET
01-Jan-2022 |
SI4800DY
|
56Kb/5P |
N-Channel Reducded Qg, Fast Switching MOSFET
18-Jul-08 |
VBsemi Electronics Co.,... |
SI4800DY-T1-E3
|
1,006Kb/9P |
N-Channel 20V (D-S) MOSFET
|