| Manufacturer | Part # | Datasheet | Description |
 Inchange Semiconductor ... |
VB20120C-E3
|
315Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20120C-E3
|
285Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024 |
|
VB20120C-E3/4W
|
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20120C-E3/4W
|
285Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024 |
|
VB20120C-E3/8W
|
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20120C-E3/8W
|
285Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024 |
|
VB20120C-M3
|
89Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
14-May-13 |
|
VB20120C-M3
|
103Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-Jun-2018 |
 Inchange Semiconductor ... |
VB20120C-M3
|
315Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20120C-M3
|
79Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
14-May-13 |
|
VB20120C-M3
|
103Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-Jun-2018 |
|
VB20120S
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
19-May-08 |
|
VB20120S
|
162Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
25-Jun-09 |
|
VB20120S-E3
|
161Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
11-Sep-13 |
|
VB20120S-E3
|
150Kb/5P |
High Voltage Trench MOS Barrier Schottky Rectifier
11-Sep-13 |
|
VB20120S-E3
|
217Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
18-Jun-2018 |
 Inchange Semiconductor ... |
VB20120S-E3
|
320Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20120S-E3/4W
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
19-May-08 |
|
VB20120S-E3/4W
|
162Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
25-Jun-09 |
|
VB20120S-E3/8W
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
19-May-08 |