| Manufacturer | Part # | Datasheet | Description |
 Vishay Siliconix |
VB20120S-E3/8W
|
162Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
25-Jun-09 |
|
VB20120S-M3
|
100Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
19-Jun-2018 |
 Inchange Semiconductor ... |
VB20120S-M3
|
320Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20120S-M3/4W
|
100Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
19-Jun-2018 |
|
VB20120S-M3/8W
|
100Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
19-Jun-2018 |
|
VB20120S-M3
|
78Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
15-May-13 |
|
VB20120SG
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-May-08 |
|
VB20120SG
|
160Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20120SG
|
164Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
25-Oct-13 |
|
VB20120SG-E3
|
161Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
13-Dec-16 |
|
VB20120SG-E3-4W
|
160Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20120SG-E3-8W
|
160Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20120SG-E3/4W
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-May-08 |
|
VB20120SG-E3/4W
|
162Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20120SG-E3/8W
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-May-08 |
|
VB20120SG-E3/8W
|
162Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20120SG-M3
|
88Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
14-May-13 |
|
VB20120SG-M3
|
101Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-Jun-2018 |
|
VB20120SG-M3
|
101Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-Jun-2018 |
|
VB20150C
|
168Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
19-May-08 |