Manufacturer | Part # | Datasheet | Description |
Inchange Semiconductor ... |
FDMS86101DC
|
294Kb/2P |
isc N-Channel MOSFET Transistor
|
Fairchild Semiconductor |
FDMS86101
|
294Kb/7P |
N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 8 m廓
|
FDMS86102LZ
|
306Kb/7P |
N-Channel Power Trench짰 MOSFET 100 V, 22 A, 25 m廓
|
FDMS86103L
|
279Kb/7P |
N-Channel PowerTrench짰 MOSFET 100 V, 49 A, 8 m廓
|
FDMS86104
|
257Kb/7P |
N-Channel PowerTrench짰 MOSFET 100 V, 16 A, 24 m廓
|
FDMS86105
|
271Kb/7P |
N-Channel PowerTrench MOSFET 100V, 26A, 34milliohm
|
FDMS86150
|
324Kb/7P |
N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 4.85 m廓
|
FDMS86152
|
258Kb/7P |
N-Channel PowerTrench MOSFET
|
FDMS86163P
|
333Kb/8P |
P-Channel PowerTrench MOSFET
|
Shanghai Leiditech Elec... |
FDMS86163P
|
2Mb/5P |
-100V P-Channel Enhancement Mode MOSFET
Rev : 01.09.2021 |
ON Semiconductor |
FDMS86181
|
482Kb/7P |
MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH
December, 2020 ??Rev. 3 |
FDMS86182
|
410Kb/8P |
N-Channel Shielded Gate PowerTrench MOSFET
September 2016 Rev. 1.0 |
FDMS86183
|
471Kb/8P |
N-Channel Shielded Gate PowerTrench MOSFET
November, 2016, Rev. 1.0 |
Fairchild Semiconductor |
FDMS86200
|
319Kb/7P |
N-Channel Power Trench짰 MOSFET 150 V, 49 A, 18 m廓
|
FDMS86200DC
|
1Mb/2P |
DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs
|
FDMS86201
|
221Kb/7P |
N-Channel PowerTrench짰 MOSFET 120 V, 35 A, 11.5 m
|
FDMS8622
|
278Kb/7P |
N-Channel Power Trench짰 MOSFET 100 V, 16.5 A, 56 m廓
|
FDMS86250
|
272Kb/7P |
N-Channel PowerTrench짰 MOSFET 150 V, 20 A, 25 m廓
|
FDMS86252
|
268Kb/7P |
Max rDS(on) = 51 m廓 at VGS = 10 V, ID = 4.6 A
|
ON Semiconductor |
FDMS86255
|
333Kb/7P |
MOSFET ??N-Channel, Shielded Gate, POWERTRENCH
August, 2021 ??Rev. 0 |