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MMBT5551 Datasheet, PDF

Search Partnumber : Match&Start with "MMBT5551" - Total : 130 ( 3/7 Page)

Manufacturer	Part #	Datasheet	Description
Dongguan Pingjingsemi T...	MMBT5551	1Mb/3P	NPN Transistor
Pan Jit International I...	MMBT5551	261Kb/6P	NPN HIGH VOLTAGE TRANSISTOR
Foshan Blue Rocket Elec...	MMBT5551	1Mb/6P	Silicon NPN transistor in a SOT-23 Plastic Package
Diotec Semiconductor	MMBT5551	98Kb/2P	Surface Mount General Purpose Si-Epi-Planar Transistors
Shenzhen Luguang Electr...	MMBT5551	641Kb/3P	NPN General Purpose Transistor
Fairchild Semiconductor	MMBT5551	216Kb/9P	NPN General-Purpose Amplifier
Jiangsu Changjiang Elec...	MMBT5551	846Kb/4P	SOT-23 Plastic-Encapsulate Transistors
Galaxy Semi-Conductor H...	MMBT5551	184Kb/3P	NPN General Purpose Transistor
Bytesonic Electronics C...	MMBT5551	387Kb/3P	TRANSISTOR(NPN)
Fairchild Semiconductor	MMBT5551	628Kb/1P	FAIRCHILD Small Signal Transistors
Guangdong Kexin Industr...	MMBT5551-3	1Mb/2P	NPN Transistors
Diodes Incorporated	MMBT5551-7	47Kb/2P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30061 Rev. 4 - 2
	MMBT5551-7-F	419Kb/4P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30061 Rev. 9 - 2
	MMBT5551-7-F	128Kb/4P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30061 Rev. 11 - 2
Unisonic Technologies	MMBT5551-A-AE3-B-R	51Kb/4P	HIGH VOLTAGE SWITCHING TRANSISTOR
	MMBT5551-A-AE3-C-R	51Kb/4P	HIGH VOLTAGE SWITCHING TRANSISTOR
	MMBT5551-A-AE3-E-R	51Kb/4P	HIGH VOLTAGE SWITCHING TRANSISTOR
	MMBT5551-B-AE3-B-R	51Kb/4P	HIGH VOLTAGE SWITCHING TRANSISTOR
	MMBT5551-B-AE3-C-R	51Kb/4P	HIGH VOLTAGE SWITCHING TRANSISTOR
	MMBT5551-B-AE3-E-R	51Kb/4P	HIGH VOLTAGE SWITCHING TRANSISTOR

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Brief Description of MMBT5551

MMBT5551 is a small signal NPN bipolar junction transistor (BJT) that is commonly used in low-power amplification and switching applications. It is a surface-mount device that is available in a small SOT-23 package.

The MMBT5551 transistor has a maximum collector-emitter voltage rating of 160V and a maximum collector current rating of 600mA. It also has a low noise figure, with a typical hFE (DC current gain) of 110 to 220 and a maximum saturation voltage of 0.3V.

Because of its low noise figure and high gain, the MMBT5551 transistor is frequently used in low-power audio amplifiers, preamplifiers, and other signal processing circuits. It can also be used in switching applications where low power loss and fast switching speeds are important.

When using the MMBT5551 transistor or any other BJT in a circuit, it's important to pay attention to its pinout and operating parameters to ensure that it is properly biased and operates within its safe operating limits.

Equivalent for MMBT5551

The MMBT5551 is a small signal NPN bipolar junction transistor (BJT) with a maximum collector current rating of 600mA and a maximum collector-emitter voltage rating of 160V. If you need to replace a MMBT5551 transistor, here are some options that you can consider:

2N3904: This is a widely used NPN BJT with a maximum collector current rating of 200mA and a maximum collector-emitter voltage rating of 40V. It can be used as a replacement for the MMBT5551 transistor in many low voltage applications.

BC547: This is another NPN BJT with a maximum collector current rating of 100mA and a maximum collector-emitter voltage rating of 45V. It is a popular replacement for the MMBT5551 transistor in many low current applications.

PN2222A: This is a NPN BJT with a maximum collector current rating of 600mA and a maximum collector-emitter voltage rating of 40V. It has similar characteristics to the MMBT5551 transistor and can be used as a replacement in many applications.

MPSA42: This is a high voltage NPN BJT with a maximum collector-emitter voltage rating of 300V and a maximum collector current rating of 500mA. It can be used as a replacement for the MMBT5551 transistor in applications where a higher voltage capability is required.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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