Manufacturer |
Marking |
Part # |
Package |
Datasheet |
Description |
Vishay Siliconix |
MO
|
BF998
|
SOT-143
|
155Kb / 9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 23-Jun-99 |
Toshiba Semiconductor |
MO
|
2SC2873
|
SOT-89
|
163Kb / 5P |
Power Amplifier Applications Power Switching Applications
|
DONGGUAN YOU FENG WEI E... |
MO
|
2SC2873-O
|
SOT-89
|
562Kb / 3P |
NPN Transistors
|
Texas Instruments |
MO
|
TXU0101DRYR
|
SON
|
1Mb / 35P |
[Old version datasheet] TXU0101 Single-Bit Fixed Direction Voltage-Level Translator with Schmitt-Trigger Inputs and 3-State Outputs
FEBRUARY 2022 |
Nanjing International G... |
MO
|
2SC2873
|
SOT-89
|
511Kb / 4P |
Silicon NPN Epitaxial Transistor
|
Vishay Siliconix |
MO
|
BF998
|
SOT-143
|
318Kb / 10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.8, 05-Sep-08 |
Infineon Technologies A... |
MO
|
BF998
|
SOT-143
|
249Kb / 6P |
Silicon N-Channel MOSFET Tetrode
Feb-13-2004 |
SHIKUES Electronics |
MO
|
2SC2873AO
|
SOT-89-3L
|
2Mb / 3P |
Plastic-Encapsulate Transistors
|
Texas Instruments |
MO
|
TXU0101DRYR
|
SON
|
2Mb / 40P |
[Old version datasheet] TXU0101 Single-Bit Fixed Direction Voltage-Level Translator with Schmitt-Trigger Inputs and 3-State Outputs
FEBRUARY 2022 |
Toshiba Semiconductor |
MO
|
2SC2873
|
SOT-89
|
187Kb / 4P |
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
Infineon Technologies A... |
MO
|
BF998
|
SOT-143
|
93Kb / 9P |
Silicon N_Channel MOSFET Tetrode
2007-04-20 |
Shanghai Leiditech Elec... |
MO
|
LM1MA142WAT1G
|
SOT-323
|
337Kb / 3P |
Common Anode Silicon Dual Switching Diode
|
Diodes Incorporated |
MO
|
DESD3V3X1BCSF-7
|
X2-DSN0603-2
|
344Kb / 5P |
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
February 2021 Rev.1 - 2 |
Guangdong Youtai Semico... |
MOC
|
UCLAMP1201P
|
SLP1006P2
|
284Kb / 4P |
Ultra-small package (1.0 x 0.6 x 0.5mm)
|
Rectron Semiconductor |
MOC
|
TEP1201M
|
DFN1006
|
167Kb / 5P |
Low Capacitance TVS/ESD Protection Diode
|
ON Semiconductor |
MOL
|
CAT24M01HU5I-GT3
|
UDFN8
|
384Kb / 18P |
EEPROM Serial 1-Mb I2C
May, 2018 ??Rev. 4 |
Vishay Siliconix |
MOR
|
BF998R
|
SOT-143R
|
318Kb / 10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.8, 05-Sep-08 |
Infineon Technologies A... |
MOR
|
BF998R
|
SOT-143R
|
249Kb / 6P |
Silicon N-Channel MOSFET Tetrode
Feb-13-2004 |
Vishay Siliconix |
MOR
|
BF998R
|
SOT-143R
|
155Kb / 9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 23-Jun-99 |
Infineon Technologies A... |
MOR
|
BF998R
|
SOT-143R
|
93Kb / 9P |
Silicon N_Channel MOSFET Tetrode
2007-04-20 |