## Technical Overview of the 2SC4367 Transistor The **2SC4367** is a High-Frequency NPN Silicon Epitaxial Planar Transistor. It is primarily designed for high-frequency amplification and oscillation applications, particularly in the radio frequency (RF) stages of telecommunications equipment. --- ### 1. Key Technical Specifications Below are the absolute maximum ratings and electrical characteristics typically found in the datasheet (at $T_a = 25^\circ C$): | Parameter | Symbol | Rating | Unit | | :--- | :--- | :--- | :--- | | Collector-Base Voltage | $V_{CBO}$ | 30 | V | | Collector-Emitter Voltage | $V_{CEO}$ | 20 | V | | Emitter-Base Voltage | $V_{EBO}$ | 3 | V | | Collector Current | $I_C$ | 50 | mA | | Collector Power Dissipation | $P_C$ | 150 | mW | | Transition Frequency | $f_T$ | 1.1 (Typ) | GHz | | DC Current Gain | $h_{FE}$ | 60 - 320 | - | --- ### 2. Physical Characteristics and Pinout The 2SC4367 is most commonly found in the **SOT-23** (or Mini-Mold) surface-mount package. This small footprint makes it ideal for compact mobile devices. #### Pin Configuration: 1. **Base (B)**: Controls the flow of current between emitter and collector. 2. **Emitter (E)**: The source of charge carriers. 3. **Collector (C)**: The output terminal where the current is collected. --- ### 3. Primary Applications Due to its high transition frequency ($f_T$) of approximately 1.1 GHz, this component is utilized in: * **VHF/UHF Amplifiers**: Boosting signals in high-frequency bands. * **Local Oscillators**: Used in tuners and radio receivers. * **FM Radios**: Specifically in the RF-front end stages. * **Buffer Stages**: Isolating different stages of an RF circuit to prevent impedance mismatching. --- ### 4. Circuit Implementation Example When using the 2SC4367 in a simple Common Emitter amplifier configuration, the bias circuit should look similar to this: ```text Vcc (e.g., 5V - 12V) | [ Rc ] (Collector Resistor) |------- Output [ C ] B ----| 2SC4367 (NPN) [ E ] | GND ``` ---