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  • M3H55FBG-R

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    The **M3H55FBG-R** is a high-performance, N-channel Power MOSFET typically manufactured by **UBIQ (u-Power)**. It is widely used in power management circuits, specifically in DC-DC converters for motherboards, graphics cards, and industrial power supplies. --- ### ## Technical Specifications Below are the primary electrical characteristics for the M3H55FBG-R: | Parameter | Symbol | Typical Value | | :--- | :--- | :--- | | **Drain-Source Voltage** | $V_{DSS}$ | 30V | | **Continuous Drain Current** | $I_D$ | ~55A (at $T_C = 25^\circ C$) | | **Static Drain-Source On-Resistance** | $R_{DS(ON)}$ | ~5.0 mΩ (at $V_{GS} = 10V$) | | **Gate Threshold Voltage** | $V_{GS(th)}$ | 1.0V to 2.5V | | **Package Type** | Package | PRPAK 5x6 (similar to DFN5060) | | **Power Dissipation** | $P_D$ | ~35W to 40W | --- ### ### Key Features 1. **Low $R_{DS(ON)}$:** The low resistance between the Drain and Source when the transistor is "on" minimizes power loss due to heat, significantly increasing energy efficiency. 2. **Logic Level Gate Drive:** It can be fully switched on using low gate voltages (typically 4.5V to 10V), making it compatible with many PWM controllers and microcontrollers. 3. **High-Speed Switching:** Designed with low gate charge ($Q_g$), allowing for fast transitions between states, which is essential for high-frequency switching regulators. 4. **Trench Technology:** It utilizes advanced trench technology to achieve high cell density, which reduces the physical size of the chip while maintaining high current capacity. --- ### ### Typical Applications * **Computing:** VRM (Voltage Regulator Module) for CPU and GPU power delivery. * **DC-DC Converters:** Buck, Boost, and Buck-Boost converters in portable electronics. * **Battery Management:** Protection circuits and charging modules for Li-ion battery packs. * **Load Switching:** Used as an electronic switch to turn on/off power rails in industrial equipment. --- ### ### Thermal and Mechanical Considerations The **PRPAK 5x6** package is a surface-mount design featuring a large thermal pad on the bottom. To ensure the component does not exceed its maximum junction temperature ($150^\circ C$), this pad must be soldered to a large copper area on the PCB to act as a heat sink.
    ✨ Follow-up Questions
    • ⤷ What are the direct equivalents or cross-references for the M3H55FBG-R?
    • ⤷ Can you explain the gate charge requirements for driving this MOSFET efficiently?
    • ⤷ How does temperature affect the RDS(on) value of this specific part?