The **M3H61FAG-R** is a high-performance N-Channel Enhancement Mode Power MOSFET commonly used in power management and switching applications. It is manufactured by companies like **UBIQ (uPI Semiconductor)**. ### 1. Key Technical Specifications The following table highlights the primary electrical characteristics of the M3H61FAG-R: | Parameter | Symbol | Typical Value | | :--- | :---: | :--- | | **Drain-Source Voltage** | $V_{DSS}$ | 30V | | **Gate-Source Voltage** | $V_{GSS}$ | ±20V | | **Continuous Drain Current** | $I_D$ | ~60A to 80A (Package dependent) | | **Static Drain-Source On-Resistance** | $R_{DS(on)}$ | ~2.5mΩ to 3.5mΩ (@VGS=10V) | | **Total Gate Charge** | $Q_g$ | ~25nC to 35nC | | **Package Type** | - | PDFN5x6 (PowerDFN) | --- ### 2. Functional Features * **Low $R_{DS(on)}$:** The extremely low on-resistance reduces power dissipation and heat generation during operation, improving overall system efficiency. * **High Speed Switching:** Designed for high-frequency DC-DC converters. * **Trench Technology:** Utilizes advanced trench gate designs to achieve high cell density and low gate charge. * **Thermal Efficiency:** The PDFN5x6 package provides excellent thermal resistance, allowing for high current handling in a small footprint. --- ### 3. Pin Configuration (PDFN5x6) In a standard PDFN5x6 package, the pins are typically assigned as follows: 1. **Pins 1, 2, 3:** Source (S) 2. **Pin 4:** Gate (G) 3. **Pins 5, 6, 7, 8 (Bottom Pad):** Drain (D) --- ### 4. Common Applications Due to its high current capacity and low resistance, the M3H61FAG-R is frequently found in: * **Motherboards:** VRM (Voltage Regulator Module) circuits for CPUs and GPUs. * **DC-DC Converters:** Point-of-load power supplies. * **Battery Management:** Protection circuits and charging modules. * **Motor Control:** Small BLDC motor drivers. ---