MMBTH10-X-AE3-R
AI

The **MMBTH10-X-AE3-R** is an NPN Silicon High-Frequency Transistor specifically designed for use in VHF and UHF amplification and oscillator circuits. It is a surface-mount version of the classic 2N918 transistor, optimized for low-noise and high-gain performance in radio frequency (RF) applications.
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## 1. Technical Specifications
Below are the key electrical characteristics of the device:
| Parameter | Symbol | Value | Unit |
| :--- | :--- | :--- | :--- |
| **Collector-Emitter Voltage** | $V_{CEO}$ | 15 | V |
| **Collector-Base Voltage** | $V_{CBO}$ | 25 | V |
| **Emitter-Base Voltage** | $V_{EBO}$ | 3.0 | V |
| **Continuous Collector Current** | $I_C$ | 50 | mA |
| **Power Dissipation ($T_A=25^{\circ}C$)** | $P_D$ | 225 | mW |
| **Current Gain-Bandwidth Product** | $f_T$ | 650 (Min) | MHz |
| **DC Current Gain** | $h_{FE}$ | 60 - 150 | - |
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## 2. Key Electronic Features
* **High Frequency Capability:** With a transition frequency ($f_T$) typically exceeding 600 MHz, this transistor is ideal for FM radio, TV tuners, and high-speed switching.
* **Low Capacitance:** It features low output capacitance ($C_{ob} \approx 1.7 pF$), which reduces signal feedback and improves stability at high frequencies.
* **SOT-23 Package:** The "AE3" suffix refers to the SOT-23 surface-mount package, making it suitable for compact, automated PCB assembly.
* **NPN Polarity:** Being an NPN type, it is controlled by a positive current at the base and is standard for ground-referenced circuits.
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## 3. Part Number Breakdown (UTC Convention)
The part number follows the **Unisonic Technologies (UTC)** naming scheme:
1. **MMBTH10**: The base model for the RF NPN Transistor.
2. **X**: Potential variation in gain ($h_{FE}$) ranking or specific internal testing.
3. **AE3**: Package code for **SOT-23**.
4. **R**: Packing code, typically meaning **Tape and Reel**.
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## 4. Typical Applications
* **RF Oscillators:** Used as the local oscillator in radio receivers.
* **VHF Amplifiers:** Boosting signals in the Very High Frequency range.
* **Mixer Circuits:** Combining signals in RF front-ends.
* **High-Speed Switching:** Digital logic circuits requiring fast transition times.
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## 5. Pinout Configuration (SOT-23)
```text
(3) Collector
|
-----------
| (3) |
| |
| (1) (2) |
-----------
| |
Base Emitter
```
- ⤷
What are the equivalent alternative part numbers for MMBTH10?
- ⤷ How does the noise figure of MMBTH10 compare to other RF transistors?
- ⤷ Can this transistor be used in a 2.4GHz Wi-Fi circuit?