## UT3403G-AE3-R: Electronic Specifications and Overview The **UT3403G-AE3-R** is a high-performance **P-Channel enhancement mode Field Effect Transistor (MOSFET)**. It is widely used in power management applications due to its low on-state resistance and high power handling capabilities in a compact package. --- ### 1. Key Technical Specifications The following table summarizes the primary electrical characteristics of the UT3403G-AE3-R: | Parameter | Symbol | Maximum Rating | Unit | | :--- | :--- | :--- | :--- | | Drain-Source Voltage | $V_{DSS}$ | -30 | V | | Gate-Source Voltage | $V_{GSS}$ | ±12 | V | | Continuous Drain Current | $I_D$ | -2.6 | A | | Pulsed Drain Current | $I_{DM}$ | -10 | A | | Power Dissipation ($T_A=25°C$) | $P_D$ | 0.35 | W | | On-State Resistance ($V_{GS}=-10V$) | $R_{DS(ON)}$ | 115 (Typ) | mΩ | | Operating Temperature | $T_J$ | -55 ~ +150 | °C | --- ### 2. Physical Characteristics and Packaging * **Package Type:** SOT-23 (Surface Mount Device). * **Halogen-Free:** The "G" in the part number usually indicates a Halogen-free and RoHS-compliant product. * **Tape and Reel:** The "R" suffix indicates that the part is supplied in a Tape and Reel format for automated pick-and-place assembly. --- ### 3. Pin Configuration The SOT-23 package has a standard 3-pin layout: 1. **Gate (G):** Controls the biasing of the transistor. 2. **Source (S):** Usually connected to the higher potential in a P-Channel configuration. 3. **Drain (D):** The output terminal where the load is typically connected. --- ### 4. Common Applications Due to its low threshold voltage and efficiency, this MOSFET is commonly found in: * **Power Management:** DC-DC converters and load switches. * **Battery Protection:** Circuits for mobile phones and portable electronics. * **Load Switching:** Controlling power to specific subsystems to save energy. * **Inverters:** Low-side or high-side switching in low-voltage applications. --- ### 5. Implementation Example (Schematic Logic) To turn the MOSFET **ON**, the Gate voltage ($V_G$) must be lower than the Source voltage ($V_S$) by at least the threshold voltage ($V_{GS(th)}$). ```text [High Potential / Battery] ---- (Source) | [UT3403G] --- (Gate) <--- Control Logic (Low = ON) | (Drain) ---- [Load] ---- [Ground] ``` ---