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  • UT4407G-S08-R

  • AI
    The **UT4407G-S08-R** is a high-performance **P-Channel Enhancement Mode Field Effect Transistor (MOSFET)**. It is widely used in power management applications due to its low on-state resistance and high-speed switching capabilities. --- ### 1. Key Technical Specifications Below are the primary electrical characteristics of the UT4407G-S08-R: | Parameter | Symbol | Maximum Rating | | :--- | :--- | :--- | | **Drain-Source Voltage** | $V_{DSS}$ | -30 V | | **Gate-Source Voltage** | $V_{GSS}$ | ±20 V | | **Continuous Drain Current** | $I_D$ | -12 A | | **Pulsed Drain Current** | $I_{DM}$ | -50 A | | **Static Drain-Source On-Resistance** | $R_{DS(ON)}$ | 13 mΩ (at $V_{GS}$ = -10V) | | **Power Dissipation** | $P_D$ | 3.1 W | | **Package Type** | SOP-8 | Surface Mount | --- ### 2. Physical and Part Number Breakdown The nomenclature of the part provides specific details about its manufacturing and packaging: * **UT4407**: The core model number for the P-Channel MOSFET. * **G**: Represents "Halogen-Free" and "RoHS Compliant" (Green product). * **S08**: Indicates the **SOP-8** (Small Outline Package) 8-pin package. * **R**: Denotes the packing type, typically **Tape and Reel**. ### 3. Pin Configuration (SOP-8) In a standard SOP-8 package for this MOSFET, the pins are typically assigned as follows: | Pin Number | Function | Description | | :--- | :--- | :--- | | 1, 2, 3 | **Source (S)** | The source terminal | | 4 | **Gate (G)** | Controls the turning on/off of the MOSFET | | 5, 6, 7, 8 | **Drain (D)** | The drain terminal (connected to the internal heat sink) | --- ### 4. Applications The UT4407G is optimized for the following use cases: * **Load Switching:** Used in battery-powered devices to disconnect power to idle circuits. * **Notebook Computers:** Efficient power distribution and CPU core power conversion. * **DC-DC Converters:** High-speed switching for voltage regulation. * **Battery Protection:** Protecting lithium-ion packs from overcurrent or deep discharge. ### 5. Features * **Low $R_{DS(ON)}$:** Minimizes power loss through heat, increasing overall system efficiency. * **High Power Handling:** Capable of handling up to 12A continuous current despite the small SOP-8 footprint. * **Trench Technology:** Uses advanced high-density cell design to achieve extremely low resistance. ---
    ✨ Follow-up Questions
    • ⤷ What is the gate threshold voltage range for the UT4407G?
    • ⤷ How does the RDS(ON) change when the gate voltage is reduced to -4.5V?
    • ⤷ What are the equivalent alternative parts for this MOSFET?