The **UT4957L-S08-R** is a high-performance Dual P-Channel enhancement mode Power MOSFET manufactured by Unisonic Technologies (UTC). It is primarily designed for power management and switching applications where space and efficiency are critical. --- ### 1. Key Technical Specifications Below are the primary electrical characteristics of the UT4957L-S08-R: | Parameter | Symbol | Maximum Rating | | :--- | :---: | :--- | | **Drain-Source Voltage** | $V_{DSS}$ | -30 V | | **Gate-Source Voltage** | $V_{GSS}$ | ±20 V | | **Continuous Drain Current** | $I_D$ | -7.0 A | | **Pulsed Drain Current** | $I_{DM}$ | -30 A | | **Static Drain-Source On-Resistance** | $R_{DS(ON)}$ | 28 mΩ @ $V_{GS}$ = -10V | | **Total Gate Charge** | $Q_g$ | 21 nC (Typical) | | **Operating Temperature** | $T_j$ | -55 to +150 °C | --- ### 2. Physical and Package Characteristics The nomenclature "S08-R" indicates the packaging and delivery format: * **Package Type:** SOP-8 (Small Outline Package). * **Configuration:** Dual MOSFET (Two independent P-Channel MOSFETs in one chip). * **Packing:** Tape and Reel (indicated by the "-R"). * **Lead-Free:** The "L" indicates a Lead-free/Halogen-free assembly. --- ### 3. Pin Configuration (SOP-8) Since it is a dual P-Channel device, the 8 pins are typically assigned as follows: | Pin Number | Function | Description | | :--- | :--- | :--- | | 1 | **S1** | Source 1 | | 2 | **G1** | Gate 1 | | 3 | **S2** | Source 2 | | 4 | **G2** | Gate 2 | | 5, 6 | **D2** | Drain 2 | | 7, 8 | **D1** | Drain 1 | --- ### 4. Typical Applications The UT4957L is commonly used in low-voltage, high-current circuits such as: * **Load Switches:** Turning power rails on/off in portable devices. * **Battery Management:** Protection circuits and charging paths for Li-ion batteries. * **DC-DC Converters:** Buck or Boost converters in laptops and mobile electronics. * **Motor Drives:** Small DC motor control circuits. ### 5. Features * **Low $R_{DS(ON)}$:** Minimizes power loss due to heat during conduction. * **Fast Switching:** High speed for efficient power conversion. * **High Power Density:** Provides two MOSFETs in a compact SOP-8 footprint, saving PCB space. ---