The **UT6302G-AE3-R** is an N-Channel enhancement mode Power MOSFET manufactured by Unisonic Technologies (UTC). It is designed for high-speed switching and low voltage applications, commonly found in power management circuits of portable electronics. --- ### 1. Key Technical Specifications The following table summarizes the primary electrical characteristics of the UT6302G: | Parameter | Symbol | Maximum Rating | | :--- | :--- | :--- | | Drain-Source Voltage | $V_{DSS}$ | 20 V | | Gate-Source Voltage | $V_{GSS}$ | ±12 V | | Continuous Drain Current | $I_D$ | 0.6 A | | Pulsed Drain Current | $I_{DM}$ | 1.2 A | | Static Drain-Source On-Resistance | $R_{DS(ON)}$ | 0.4 $\Omega$ (at $V_{GS}=4.5V$) | | Power Dissipation | $P_D$ | 350 mW | | Package Type | SOT-23 | AE3 | ### 2. Physical and Package Features The suffix **AE3** indicates the package type, while **R** typically denotes the tape and reel packaging for automated assembly. * **Package:** SOT-23 (Surface Mount Device). * **Pin Configuration:** 1. **Gate (G):** Controls the switching of the MOSFET. 2. **Source (S):** The source of electrons. 3. **Drain (D):** The exit point for the current. * **Halogen-Free:** The "G" in the part number indicates it is a Green/Halogen-free product. ### 3. Application Areas Due to its low threshold voltage and small footprint, the UT6302G is ideal for: * **Load Switching:** Turning peripheral devices on/off in mobile phones or tablets. * **Battery Management:** Protection and switching in Li-ion battery packs. * **Signal Level Shifting:** Converting logic levels between different voltage domains. * **DC-DC Converters:** Small-scale power conversion in consumer electronics. --- ### 4. Implementation Example Below is a simple representation of how this N-Channel MOSFET might be defined in a hardware description or simulation netlist: ```spice * SPICE Model snippet for UT6302G (Representative) .MODEL UT6302G NMOS ( + LEVEL=3 + VTO=1.0 + KP=20u + RD=0.4 + RS=0.1 + IS=1E-14) ```