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Part No.	60N06
Manufacturer	UTC
Size	201 Kbytes
Pages	8 pages
Description	60 Amps, 60 Volts N-CHANNEL POWER MOSFET

Datasheet Summary with AI

# UNISONIC 60N06 Power MOSFET

## Description
N-channel enhancement mode power field-effect transistor for telecom and computer applications.

## Features
️· RDS(ON) = 18mΩ @VGS = 10 V
️· Ultra low gate charge (typical 39 nC)
️· Fast switching capability
️· Low reverse transfer Capacitance (CRSS = typical 115 pF)
️· Avalanche energy specified
️· Improved dv/dt capability, high ruggedness

## Ordering Information
️· 60N06-TA3-T: TO-220 package, Tube packing
️· 60N06L-TA3-T: TO-220 package, Lead-free plating, Tube packing
- G = Gate, D = Drain, S = Source

## Absolute Maximum Ratings
️· Drain to Source Voltage (VDSS): 60 V
️· Gate to Source Voltage (VGS): ±20 V
️· Continuous Drain Current (ID): 60 A (TC = 25°C), 39 A (TC = 100°C)
️· Pulsed Drain Current (IDM): 120 A
️· Avalanche Energy (EAS): 1000 mJ
️· Repetitive Avalanche Energy (EAR): 180 mJ
️· Total Power Dissipation (PD): 120 W
️· Junction Temperature (TJ): +175°C
️· Storage Temperature (TSTG): -55°C to +175°C

## Thermal Data
️· Thermal Resistance (θJA): 62.5 °C/W
️· Thermal Resistance (θJC): 1.25 °C/W

## Electrical Characteristics (TC = 25°C)
OFF Characteristics
️· Drain-Source Breakdown Voltage (BVDSS): 60 V
️· Drain-Source Leakage Current (IDSS): 1 µA
️· Gate-Source Leakage Current (IGSS): ±100 nA

ON Characteristics
️· Gate Threshold Voltage (VGS(TH)): 2.0 - 4.0 V
️· Static Drain-Source On-State Resistance (RDS(ON)): 14 - 18 mΩ @ VGS = 10 V, ID = 30 A

Dynamic Characteristics
️· Input Capacitance (CISS): 2000 pF
️· Output Capacitance (COSS): 400 pF
️· Reverse Transfer Capacitance (CRSS): 115 pF

Switching Characteristics
️· Turn-On Delay Time (tD(ON)): 12-30 ns
️· Rise Time (tR): 11-30 ns
️· Turn-Off Delay Time (tD(OFF)): 25-50 ns
️· Fall Time (tF): 15-30 ns
️· Total Gate Charge (QG): 39-60 nC
️· Gate-Source Charge (QGS): 12 nC
️· Gate-Drain Charge (QGD): 10 nC

Source-Drain Diode Characteristics
️· Diode Forward Voltage (VSD): 1.6 V
️· Continuous Source Current (IS): 60 A
️· Pulsed Source Current (ISM): 120 A
️· Reverse Recovery Time (tRR): 60 ns
️· Reverse Recovery Charge (QRR): 3.4 µC