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Hello, Please ask a question about 9015_15 Datasheet
# Example questions:
➢ How does the hfe range differ between the a, b, and c ranks?
➢ What is the typical saturation voltage (vce(sat)) when the collector current is -100ma and base current is -5ma?
➢ What is the maximum collector current (ic) this transistor can handle?
# UNISONIC 9015 PNP Epitaxial Silicon Transistor
## Features
· High power dissipation: 450mW
· Excellent hFE linearity
· Complementary to UTC 9014
· Designed for pre-amplifier, low level, and low noise applications.
## Ordering Information
· Package Type: TO-92
· Pin Assignment:
- Emitter (E)
- Base (B)
- Collector (C)
· Packing Options: Tape Box, Bulk
· Availability: Lead Free & Halogen Free options.
## Absolute Maximum Ratings
· Collector-Base Voltage (VCBO): -50V
· Collector-Emitter Voltage (VCEO): -45V
· Emitter-Base Voltage (VEBO): -5V
· Collector Current (IC): -100mA
· Junction Temperature (TJ): +150°C
· Storage Temperature (TSTG): -55~+150°C
## Electrical Characteristics (TA=25°C)
· Collector-Base Breakdown Voltage (BV CBO): -50V
· Collector-Emitter Breakdown Voltage (BV CEO): -45V
· Emitter-Base Breakdown Voltage (BV EBO): -5V
· Collector-Emitter Saturation Voltage (VCE(sat)): -0.2 to -0.7V (IC = -100mA, IB = -5mA)
· Base-Emitter Saturation Voltage (VBE(sat)): -0.82 to -1.0V (IC = -100mA, IB = -5mA)
· DC Current Gain (hFE): 60-600 (VCE=-5V, IC = -1mA)
· Output Capacitance (Cob): 4.5-7.0 pF
· Current Gain-Bandwidth Product (fT): 100-190 MHz
## hFE Classification
· Rank A: 60-150
· Rank B: 100-300
· Rank C: 200-600
# UNISONIC 9015 PNP Epitaxial Silicon Transistor
## Features
· High power dissipation: 450mW
· Excellent hFE linearity
· Complementary to UTC 9014
· Designed for pre-amplifier, low level, and low noise applications.
## Ordering Information
· Package Type: TO-92
· Pin Assignment:
- Emitter (E)
- Base (B)
- Collector (C)
· Packing Options: Tape Box, Bulk
· Availability: Lead Free & Halogen Free options.
## Absolute Maximum Ratings
· Collector-Base Voltage (VCBO): -50V
· Collector-Emitter Voltage (VCEO): -45V
· Emitter-Base Voltage (VEBO): -5V
· Collector Current (IC): -100mA
· Junction Temperature (TJ): +150°C
· Storage Temperature (TSTG): -55~+150°C
## Electrical Characteristics (TA=25°C)
· Collector-Base Breakdown Voltage (BV CBO): -50V
· Collector-Emitter Breakdown Voltage (BV CEO): -45V
· Emitter-Base Breakdown Voltage (BV EBO): -5V
· Collector-Emitter Saturation Voltage (VCE(sat)): -0.2 to -0.7V (IC = -100mA, IB = -5mA)
· Base-Emitter Saturation Voltage (VBE(sat)): -0.82 to -1.0V (IC = -100mA, IB = -5mA)
· DC Current Gain (hFE): 60-600 (VCE=-5V, IC = -1mA)
· Output Capacitance (Cob): 4.5-7.0 pF
· Current Gain-Bandwidth Product (fT): 100-190 MHz
## hFE Classification
· Rank A: 60-150
· Rank B: 100-300
· Rank C: 200-600
| Part No. | 9015_15 |
| Manufacturer | UTC |
| Size | 103 Kbytes |
| Pages | 3 pages |
| Description | PRE-AMPLIFIER, LOW LEVEL & LOW NOISE |
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