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  • # Example questions: ➢ How does the hfe range differ between the a, b, and c ranks?
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  • Part No.9015_15
    ManufacturerUTC
    Size103 Kbytes
    Pages3 pages
    DescriptionPRE-AMPLIFIER, LOW LEVEL & LOW NOISE
    Datasheet Summary with AI

    # UNISONIC 9015 PNP Epitaxial Silicon Transistor

    ## Features
    · High power dissipation: 450mW
    · Excellent hFE linearity
    · Complementary to UTC 9014
    · Designed for pre-amplifier, low level, and low noise applications.

    ## Ordering Information
    · Package Type: TO-92
    · Pin Assignment:
    - Emitter (E)
    - Base (B)
    - Collector (C)
    · Packing Options: Tape Box, Bulk
    · Availability: Lead Free & Halogen Free options.

    ## Absolute Maximum Ratings
    · Collector-Base Voltage (VCBO): -50V
    · Collector-Emitter Voltage (VCEO): -45V

    · Emitter-Base Voltage (VEBO): -5V
    · Collector Current (IC): -100mA
    · Junction Temperature (TJ): +150°C
    · Storage Temperature (TSTG): -55~+150°C

    ## Electrical Characteristics (TA=25°C)
    · Collector-Base Breakdown Voltage (BV CBO): -50V
    · Collector-Emitter Breakdown Voltage (BV CEO): -45V
    · Emitter-Base Breakdown Voltage (BV EBO): -5V
    · Collector-Emitter Saturation Voltage (VCE(sat)): -0.2 to -0.7V (IC = -100mA, IB = -5mA)
    · Base-Emitter Saturation Voltage (VBE(sat)): -0.82 to -1.0V (IC = -100mA, IB = -5mA)
    · DC Current Gain (hFE): 60-600 (VCE=-5V, IC = -1mA)
    · Output Capacitance (Cob): 4.5-7.0 pF
    · Current Gain-Bandwidth Product (fT): 100-190 MHz

    ## hFE Classification
    · Rank A: 60-150
    · Rank B: 100-300
    · Rank C: 200-600

    # UNISONIC 9015 PNP Epitaxial Silicon Transistor

    ## Features
    · High power dissipation: 450mW
    · Excellent hFE linearity
    · Complementary to UTC 9014
    · Designed for pre-amplifier, low level, and low noise applications.

    ## Ordering Information
    · Package Type: TO-92
    · Pin Assignment:
    - Emitter (E)
    - Base (B)
    - Collector (C)
    · Packing Options: Tape Box, Bulk
    · Availability: Lead Free & Halogen Free options.

    ## Absolute Maximum Ratings
    · Collector-Base Voltage (VCBO): -50V
    · Collector-Emitter Voltage (VCEO): -45V
    · Emitter-Base Voltage (VEBO): -5V
    · Collector Current (IC): -100mA
    · Junction Temperature (TJ): +150°C
    · Storage Temperature (TSTG): -55~+150°C

    ## Electrical Characteristics (TA=25°C)
    · Collector-Base Breakdown Voltage (BV CBO): -50V
    · Collector-Emitter Breakdown Voltage (BV CEO): -45V
    · Emitter-Base Breakdown Voltage (BV EBO): -5V
    · Collector-Emitter Saturation Voltage (VCE(sat)): -0.2 to -0.7V (IC = -100mA, IB = -5mA)
    · Base-Emitter Saturation Voltage (VBE(sat)): -0.82 to -1.0V (IC = -100mA, IB = -5mA)
    · DC Current Gain (hFE): 60-600 (VCE=-5V, IC = -1mA)
    · Output Capacitance (Cob): 4.5-7.0 pF
    · Current Gain-Bandwidth Product (fT): 100-190 MHz

    ## hFE Classification
    · Rank A: 60-150
    · Rank B: 100-300
    · Rank C: 200-600

    Part No.9015_15
    ManufacturerUTC
    Size103 Kbytes
    Pages3 pages
    DescriptionPRE-AMPLIFIER, LOW LEVEL & LOW NOISE
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