9015_15 datasheet(2/3 Pages) UTC

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9015

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R201-032.D

ABSOLUTE MAXIMUM RATINGS (T

A=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-45

Emitter-Base Voltage

VEBO

-5

Collector Current

-100

Collector Dissipation

450

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = -100μA, IE = 0

-50

Collector-Emitter Breakdown Voltage

BVCEO

IC = -1mA, IB = 0

-45

Emitter-Base Breakdown Voltage

BVEBO

IE = -100μA, IC = 0

-5

Collector-Emitter Saturation Voltage

VCE(sat)

IC = -100mA, IB = -5mA

-0.2

-0.7

Base-Emitter Saturation Voltage

VBE(sat)

IC = -100mA, IB = -5mA

-0.82

-1.0

Base-Emitter On Voltage

VBE(on)

VCE = -5V, IC = -2mA

-0.6

-0.65 -0.75

Collector Cutoff Current

ICBO

VCB = -50V, IE =0

-50

Emitter Cutoff Current

IEBO

VEB = -5V, IC =0

-100

DC Current Gain

hFE

VCE =-5V, IC = -1mA

200

600

Output Capacitance

Cob

VCB = -10V, IE =0, f =1MHz

4.5

7.0

Current Gain-Bandwidth Product

VCE = -5V, IC = -10mA

100

190

MHz

Noise Figure

VCE = -5V, IC = -0.2mA

f = 1KHz, Rs = 1K

0.7

CLASSIFICATION OF hFE

RANK

RANGE

60-150

100-300

200-600

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