| Manufacturer | Part # | Datasheet | Description |

Cree, Inc
|
PXAC192908FV |
525Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz |
| PTFB091507FH |
618Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz |
| PTFB193404F |
610Kb/14P |
Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz |
| PTAC210802FC |
719Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 ??2170 MHz |
| PXFC192207FH |
662Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 - 1990 MHz |
| PXFE181507FC |
550Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz |
| CGH27015 |
1Mb/12P |
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
| PXAE184408NB |
1Mb/6P |
Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz |
| PTVA120121M |
530Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 ??1400 MHz |
| PXAC182002FC |
495Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz |
| PXAC210552FC |
600Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz |
| PXAC261212FC |
557Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz |
| PTAC240502FC |
606Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz |
| PTRA093818NF |
600Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz |
| PTFC270101M |
970Kb/22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz |
| PTVA042502EC |
560Kb/10P |
Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 - 806 MHz |
| PXAC201202FC |
590Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz |
| PXFE211507FC |
587Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz |
| PXAC260602FC |
633Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB 28 V, 2620 ??2690 MHz |
| PXAE263708NB |
289Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz |