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HY27SAXXX Datasheet (PDF) - Hynix Semiconductor

HY27SAXXX Datasheet PDF - Hynix Semiconductor
Part # HY27SAXXX
Download  HY27SAXXX Download
File Size   729.47 Kbytes
Page   43 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

HY27SAXXX Datasheet (PDF)

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HY27SAXXX Datasheet PDF - Hynix Semiconductor

Part # HY27SAXXX
Download  HY27SAXXX Click to download

File Size   729.47 Kbytes
Page   43 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

HY27SAXXX Datasheet (HTML) - Hynix Semiconductor


HY27SAXXX Product details

DESCRIPTION
The HYNIX HY27(U/S)A(08/16)1G1M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
    - Cost effective solutions for mass storage applications
NAND INTERFACE
    - x8 or x16 bus width.
    - Multiplexed Address/ Data
    - Pinout compatibility for all densities
SUPPLY VOLTAGE
    - 3.3V device: VCC = 2.7 to 3.6V : HY27UAXX1G1M
    - 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M 1.8V Operation Product : TBD
Memory Cell Array
    - 1056Mbit = 528 Bytes x 32 Pages x 8,192 Blocks

PAGE SIZE
    - x8 device: (512 + 16 spare) Bytes : HY27(U/S)A081G1M
    - x16 device: (256 + 8 spare) Words : HY27(U/S)A161G1M
BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes : HY27(U/S)A081G1M
- x16 device: (8K + 256 spare) Words : HY27(U/S)A161G1M

PAGE READ / PROGRAM
    - Random access: 12us (max)
    - Sequential access: 50ns (min)
    - Page program time: 200us (typ)
COPY BACK PROGRAM MODE
    - Fast page copy without external buffering
FAST BLOCK ERASE
    - Block erase time: 2ms (Typ)

STATUS REGISTER
ELECTRONIC SIGNATURE
Sequential Row Read Option
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
    - Boot from NAND support
    - Automatic Memory Download

SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
    - Program/Erase locked during Power transitions
DATA INTEGRITY
    - 100,000 Program/Erase cycles
    - 10 years Data Retention
PACKAGE
    - HY27(U/S)A(08/16)1G1M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
        - HY27(U/S)A(08/16)1G1M-T (Lead)
        - HY27(U/S)A(08/16)1G1M-TP (Lead Free)
    - HY27(U/S)A08121A-V(P) : 48-Pin WSOP1 (12 x 17 x 0.7 mm)
        - HY27(U/S)A081G1M-V (Lead)
        - HY27(U/S)A081G1M-VP (Lead Free)
    - HY27(U/S)A(08/16)121M-F(P) : 63-Ball FBGA (8.5 x 15 x 1.2 mm)
        - HY27(U/S)A(08/16)1G1M-F (Lead)
        - HY27(U/S)A(08/16)1G1M-FP (Lead Free)




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About Hynix Semiconductor


Hynix Semiconductor is a South Korean company that specializes in the design and manufacture of memory semiconductors.
The company was founded in 1983 and is headquartered in Icheon, South Korea.
Hynix is one of the world's leading producers of DRAM (dynamic random access memory) and NAND flash memory, which are used in various applications such as computer systems, mobile devices, and solid-state drives.
Hynix is known for its expertise in memory semiconductor technology and its ability to deliver high-quality and high-performance memory products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized memory solutions that meet their specific requirements and needs.
In addition to its memory products, Hynix also provides a range of products and solutions for the automotive and data center markets, such as system-on-a-chip (SoC) products and high-bandwidth memory (HBM) products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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