PTFB092707FH Datasheet(PDF) - Cree, Inc

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PTFB092707FH Datasheet (PDF) - Cree, Inc

PTFB092707FH Datasheet PDF - Cree, Inc


Part #	PTFB092707FH

Download	PTFB092707FH Download

File Size	556.03 Kbytes

Page	10 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 ??960 MHz

PTFB092707FH Datasheet (PDF)

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PTFB092707FH Datasheet PDF - Cree, Inc


Part #	PTFB092707FH

Download	PTFB092707FH Click to download

File Size	556.03 Kbytes

Page	10 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 ??960 MHz

PTFB092707FH Datasheet (HTML) - Cree, Inc

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Similar Part No. - PTFB092707FH

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB092707FH	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 03.1, 2016-06-10
	PTFB092707FHV1R0	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 03.1, 2016-06-10
	PTFB092707FHV1R0XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 03.1, 2016-06-10
	PTFB092707FHV1R250	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 03.1, 2016-06-10
	PTFB092707FHV1R250XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET Rev. 03.1, 2016-06-10

Similar Description - PTFB092707FH

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB091802FC	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
	PTFB091507FH	1,015Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz Rev. 03.1, 2016-06-09
	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
Cree, Inc	PTFB072707FH	699Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 ??768 MHz
	PTFB091507FH	618Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
	PTFB091802FC	538Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
	PTFB093608FV	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 ??960 MHz
	PTRA093818NF	600Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz
WOLFSPEED, INC.	PTRA093818NF	685Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz Rev. 06.2, 2022-01-04
WOLFSPEED, INC.	PTRA095908NB	739Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz Rev. 02.2, 2022-02-13

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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