General Description
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features
■ Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A
■ Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A
■ Low Miller Charge
■ Low QRR Body Diode
■ Optimized efficiency at high frequencies
■ UIS Capability (Single Pulse and Repetitive Pulse)
■ RoHS Compliant

Applications
■ Distributed Power Architectures and VRMs.
■ Primary Switch for 24V and 48V Systems
■ High Voltage Synchronous Rectifier
■ Formerly developmental type 82744