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K3210 Datasheet (PDF) - Hitachi Semiconductor
K3210 Datasheet PDF - Hitachi Semiconductor
Part # K3210
Download  K3210 Download
File Size   35.22 Kbytes
Page   5 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description Silicon N Channel MOS FET High Speed Power Switching

K3210 Datasheet (PDF)

Go To PDF Page Download Datasheet
K3210 Datasheet PDF - Hitachi Semiconductor

Part # K3210
Download  K3210 Click to download

File Size   35.22 Kbytes
Page   5 Pages
Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor
Description Silicon N Channel MOS FET High Speed Power Switching

K3210 Datasheet (HTML) - Hitachi Semiconductor


K3210 Product details

Silicon N Channel MOS FET High Speed Power Switching



Features

•  Low on-resistance

    RDS =35mΩ typ.

•  High speed switching

•  4V gate drive device can be driven from 5V source




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About Hitachi Semiconductor

Hitachi Semiconductor is a subsidiary of Hitachi, Ltd., a Japanese company that specializes in the design and manufacture of semiconductors.
The company was established in 1970 and is headquartered in Tokyo, Japan.
Hitachi Semiconductor offers a wide range of products including memory products, microcontrollers, power management ICs, and other analog and digital semiconductors.
The company's products are used in various applications such as consumer electronics, automotive systems, and industrial equipment.
Hitachi Semiconductor is known for its expertise in semiconductor technology and its ability to deliver high-quality and reliable products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized semiconductor solutions that meet their specific requirements and needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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