RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications.

• Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 850 mA,
   Pout = 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
   PAR = 8.5 dB @ 0.01% Probability on CCDF.
      Power Gain — 14.5 dB
      Drain Efficiency — 26%
      IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
      ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power

Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.