D2217 Datasheet(PDF) - NEC

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D2217 Datasheet (PDF) - NEC

D2217 Datasheet PDF - NEC


Part #	D2217

Download	D2217 Download

File Size	100.19 Kbytes

Page	4 Pages

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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Description

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

D2217 Datasheet (PDF)

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D2217 Datasheet PDF - NEC


Part #	D2217

Download	D2217 Click to download

File Size	100.19 Kbytes

Page	4 Pages

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

Logo

Description	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

D2217 Datasheet (HTML) - NEC

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D2217 Product details

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

The 2SD2217 is a mold power transistor developed for low-frequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers such as pulse motor drivers and relay drivers in OA and FA equipment.

Similar Part No. - D2217

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Seme LAB	D2210UK	15Kb / 2P	METAL GATE RF SILICON FET
	D2211	19Kb / 2P	METAL GATE RF SILICON FET
	D2211UK	19Kb / 2P	METAL GATE RF SILICON FET

Similar Description - D2217

Manufacturer	Part #	Datasheet	Description
NEC	2SB601	110Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SB1431	132Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SB1430	115Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SB1432	106Kb / 6P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SD560	90Kb / 6P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SD1695	104Kb / 4P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SD2165	118Kb / 5P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
	2SD1843	76Kb / 4P	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Renesas Technology Corp	2SB1432	229Kb / 8P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Renesas Technology Corp	2SB1431	257Kb / 8P	PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

About NEC

NEC Corporation is a Japanese multinational information technology and electronics company. The company was founded in 1899 and is headquartered in Tokyo, Japan. NEC provides a wide range of products and services including information technology, telecommunications, and electronics. Its portfolio includes computer hardware, software, and services, network solutions, display solutions, and enterprise servers and storage solutions.

NEC is known for its expertise in the field of information technology and its ability to deliver innovative and high-quality products and services. The company has operations and facilities in various countries across the world and has a strong presence in the Asia-Pacific region. NEC works closely with its customers to provide customized solutions that meet their specific requirements and needs.

In addition to its core business, NEC is also active in the fields of research and development, and is involved in various projects related to advanced technologies such as artificial intelligence, 5G networks, and the Internet of Things (IoT). NEC is committed to delivering sustainable solutions that support the development of society and improve the quality of life for people around the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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